A Comparative Study of Ruthenium(0) MOCVD Precursor Complexes

Abstract

Ruthenium thin films were deposed by MOCVD at moderate temperatures using [(1,5-cyclooctadiene)(toluene)Ru(0)] 1 and [(benzene)(1,3-cyclohexadiene)Ru(0)] 2 as precursor. The incorporation of carbon in the films could not be completely avoided, because of the high catalytic activity of Ru for C-H as well as C-C activated reactions. However, using suitable ligand combination and optimized deposition conditions it was possible to minimize the amount of carbon in the Ru films. The complex 2 provides better films due to strong reduction of the gaseous follow-up products, no C-C activated reactions and minimum carbon incorporation at optimized deposition temperature and gas velocity.