A comparative study of noise properties of Si IMPATT diodes operating at 80 GHz

Physica Status Solidi (a)

2019

Herein, the possibilities of tuning oscillation frequency and power in terahertz (THz) graphene nanoribbon (GNR)‐based avalanche transit time (ATT) sources by introducing a third terminal on their planar structure are discussed. In this regard, a three‐terminal planner impact ATT (IMPATT) structure based on GNR on oxide (SiO2) is proposed. Inherent power combining capabilities of parallel‐connected IMPATT structures are utilized to increase the power output at THz frequencies. Static, high frequency, and noise simulations are carried out using in‐house simulation codes based on self‐consistent quantum drift–diffusion model. Results show that around 0.7–5.3% and 9.0–13.3% modulation of frequency and power output are achievable, respectively, in the GNR IMPATT oscillators operating in the frequency range of 1.0–10.0 THz, respectively, by applying a suitable amount of voltage at the third or controlling terminal; however, the enhancement of noise level at the output is observed to be insignificant as a result of using the active third‐terminal control.

Section: Characteristicssupporting

confidence: 60%

Three‐Terminal Graphene Nanoribbon Tunable Avalanche Transit Time Sources for Terahertz Power Generation

Physica Status Solidi (a)

2019

“…The noise measure versus operating frequency plots obtained from simulation as well as experiment (where available in literature) of Wz‐GaN, 4H‐SiC. Type‐IIb diamond, Si, and PCPC mode operated ( N = 10) G‐IMPATT sources are shown in Figure . The noise measure of the diodes sharply decreases with the increase of operating frequency.…”

Section: Characteristics Of G‐impatt Sourcesmentioning

confidence: 99%

1.0–10.0 THz Radiation from Graphene Nanoribbon Based Avalanche Transit Time Sources

Physica Status Solidi (a)

2019

The possibilities of terahertz frequency generation by using graphene nanoribbon (GNR) based avalanche transit time (ATT) sources are investigated in this paper. The most promising candidate of ATT device family, i.e., the impact avalanche transit time (IMPATT) diode is chosen for the present study. Parallel connected GNR based IMPATT structures with inherent power combining capability are proposed and simulated by using self-consistent quantum drift-diffusion model based in-house simulation codes in order to study the static, high frequency and noise performance of those at different millimeter-wave and terahertz frequency bands. The detailed study reveals that the in-build power combined GNR IMPATT sources are capable of performing more efficiently than the IMPATT sources based on some other popular semiconductor materials as well as some state-of-the-art terahertz radiators within the terahertz frequency band from 1 to 10 THz.

“…However, it can be observed from Figure 15 that noise measure of mutually injection locked ten-element G-IMPATT source operating at 94 GHz is only 26.20 dB, which is much smaller than the experimentally measures noise measure of standalone Si IMPATT source. 50 Also, the noise simulation of G-IMPATT sources operating in PCPC mode reveal that these sources are significantly less noisy as compared to the stand-alone IMPATT sources based on conventional semiconductor materials.…”

Section: F I G U R Ementioning

confidence: 97%

Terahertz wave radiation from mutually injection locked multi‐element graphene nanoribbon avalanche transit time sources

Int J Numerical Modelling

2020

Mutual injection locking of multi-element graphene nanoribbon impact avalanche transit time (G-IMPATT) sources designed to operate at different millimeter-wave (mm-wave) and terahertz frequencies has been studied. Planar circuit is used for implementing the mutual injection locking between adjacent elements of the source operating in parallel-connected-powercombined mode. The static, high frequency and noise simulations of the proposed sources have been carried out by using in-house simulation codes based on self-consistent quantum drift-diffusion model. Results show that mutual injection locking between the adjacent elements forced the sources to oscillate nearly at a single frequency even if significantly high degree of mismatch is present among the elements of the multi-element oscillators. A minor amount of reduction in power out and insignificant deterioration in the noise performance of the multi-element G-IMPATT oscillators have been observed due to the presence of mutual injection locking between the adjacent elements.