A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers
Yujie Yan,
Jun Huang,
Lei Pan
et al.
Abstract:A series of characterization methods involving high-resolution X-ray diffraction (HR-XRD), electron channel contrast imaging (ECCI), cathodoluminescence microscopy (CL), and atomic force microscopy (AFM) were applied to calculate the dislocation density of GaN-on-Si epitaxial wafers, and their performance was analyzed and evaluated. The ECCI technique, owing to its high lateral resolution, reveals dislocation distributions on material surfaces, which can visually characterize the dislocation density. While the… Show more
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