A comparative study of high-quality C-face and Si-face 3C-SiC(1 1 1) grown on off-oriented 4H-SiC substrates

Shi, Yuchen; Jokubavičius, Valdas; Höjer, Pontus; Ivanov, Ivan Gueorguiev; Yazdi, Gholam Reza; Yakimova, Rositsa; Syväjärvi, Mikael; Sun, Jianwu

doi:10.1088/1361-6463/ab2859

Cited by 19 publications

(12 citation statements)

References 36 publications

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“…This indicates that using hexagonal SiC substrates with even higher off-cut angles could be the right direction for further research, even though the growth on such substrates will require growing much thicker layers to obtain a full coverage with 3C-SiC. Therefore, a comparative study of the 3C-SiC(111) grown on the (0001)/Si-face and (000-1)/C-face on 4 degrees off-oriented 4H-SiC research size (7 × 7 mm 2 ) substrates was conducted [ 68 ]. Even though the 3C-SiC polytype is more stable on the (0001)/Si-face, it was shown that smoother surfaces of 3C-SiC could be obtained on the C-face.…”

Section: Resultsmentioning

confidence: 99%

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

et al. 2021

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In this review paper, several new approaches about the 3C-SiC growth are been presented. In fact, despite the long research activity on 3C-SiC, no devices with good electrical characteristics have been obtained due to the high defect density and high level of stress. To overcome these problems, two different approaches have been used in the last years. From one side, several compliance substrates have been used to try to reduce both the defects and stress, while from another side, the first bulk growth has been performed to try to improve the quality of this material with respect to the heteroepitaxial one. From all these studies, a new understanding of the material defects has been obtained, as well as regarding all the interactions between defects and several growth parameters. This new knowledge will be the basis to solve the main issue of the 3C-SiC growth and reach the goal to obtain a material with low defects and low stress that would allow for realizing devices with extremely interesting characteristics.

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Section: Resultsmentioning

confidence: 99%

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

et al. 2021

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“…The statistical histogram of step heights (Figure b) on the C‐face 3C‐SiC confirms that most of the steps are distributed around 0.75 nm height, which corresponds to three Si‐C bilayers or one‐3C‐SiC unit cell. In addition, the terraces/steps are straight and have length in tens or even hundreds of micrometers, indicating that the 3C‐SiC was grown on off‐axis 4H‐SiC substrate by a step‐flow growth mode without step‐bunching or DPB formation …”

Section: Resultsmentioning

confidence: 99%

“…Most recently, we have demonstrated that single-domain C-face 3C-SiC single crystal can be grown on off-axis 4H-SiC substrates and its crystalline quality has been significantly improved. [29] This allows DOI: 10.1002/pssb.201900718 Graphene layers grown on the C-face SiC exhibit quite different structural and electronic properties compared with those grown on the Si-face SiC. Herein, the growth and structural properties of graphene on the off-axis C-face 3C-SiC(1 1 1) are studied.…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, the as‐grown on‐axis 3C‐SiC layers are usually characterized by structural defects such as double‐positioning boundaries (DPBs), which would negatively affect the growth of graphene. Most recently, we have demonstrated that single‐domain C‐face 3C‐SiC single crystal can be grown on off‐axis 4H‐SiC substrates and its crystalline quality has been significantly improved . This allows us to grow graphene domains (over several square micrometers) on the C‐face 3C‐SiC.…”

Section: Introductionmentioning

confidence: 99%

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Epitaxial Graphene Growth on the Step‐Structured Surface of Off‐Axis C‐Face 3C‐SiC(1¯1¯1¯)

Shi

Zakharov

Ivanov

et al. 2020

Physica Status Solidi (b)

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Graphene layers grown on the C‐face SiC exhibit quite different structural and electronic properties compared with those grown on the Si‐face SiC. Herein, the growth and structural properties of graphene on the off‐axis C‐face 3C‐SiC(1true¯1true¯1true¯) are studied. The as‐grown 4° off‐axis 3C‐SiC(1true¯1true¯1true¯) exhibits highly periodic steps with step height of ≈0.75 nm and terrace width of ≈50 nm. After annealing at 1800 °C under 850 mbar argon atmosphere, relatively uniform large graphene domains can be grown. The low‐energy electron microscopy (LEEM) results demonstrate that one monolayer (ML) to four‐ML graphene domains are grown over several micrometers square, which enables us to measure micro low‐energy electron diffraction (μ‐LEED) on the single graphene domain. The μ‐LEED pattern collected on the monolayer domain mainly exhibits four sets of graphene (1 × 1) spots, indicating the presence of graphene grains with different azimuthal orientations in the same graphene sheet. Raman spectra collected on the graphene domains show rather small D peaks, indicating the presence of less defects and higher crystalline quality of the graphene layers grown on the C‐face off‐axis 3C‐SiC(1true¯1true¯1true¯).

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“…These four modes have been observed for various SiC polytypes [97]. By comparing peak positions of the measured spectrum to standard spectrums of SiC, one can determine the SiC polytypes [98].…”

Section: Raman Spectroscopymentioning

confidence: 87%

Growth of 3C-SiC and Graphene for Solar Water-Splitting Application

Shi

2019

Linköping Studies in Science and Technology. Dissertations

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Silicon carbide (SiC) is regarded as an important semiconductor for a variety of applications including high-temperature, high-power and high-frequency devices. The most common polytypes of SiC are hexagonal (4H-or 6H-SiC) and cubic silicon carbide (3C-SiC), which differ from each other by the ordering of the Si-C bilayers along the c-axis crystal direction. Among different polytypes of SiC, 3C-SiC has attracted specific interest due to its prominent properties such as high electron mobility and low interface trap density in MOSFET devices. Moreover, with a relatively small bandgap of 2.36 eV and suitable conduction and valence band positions, 3C-SiC has also been considered as a promising material for solar water splitting application, which provides a completely renewable approach to convert solar energy into storable hydrogen fuel. However, the growth of high-quality 3C-SiC remains a great challenge for decades. Graphene, a single layer of sp 2-bonded carbon atoms, has shown outstanding electronic properties and becomes the most promising candidate for next-generation electronic and optoelectronic devices. Epitaxial growth of graphene on SiC substrates by sublimation of Si from SiC provides a feasible route to fabricate wafer-scale device-quality graphene. The most advantage of this method is that a variety of devices can be processed directly on graphene/SiC without any transfer process, which is needed in the case of graphene produced by exfoliation or CVD on metals. During past years, the growth of monolayer (ML) graphene on hexagonal SiC (6H-SiC, 4H-SiC) substrates has been extensively studied. However, it is challenging to grow large-area and uniform multilayer graphene on hexagonal SiC substrates due to the stepbunching issue during the sublimation growth. Multilayer graphene has recently attracted great interest due to its tunable electronic properties for various electronic and optoelectronic applications. It has been shown that the electronic properties of multilayer graphene are strongly influenced by its stacking sequence. In particular, the rhombohedral stacking sequence (ABC stacking) has shown its potential to introduce a flat band energy dispersion at the K points of the Brillouin zone, which would result in many exotic phases of matter such as superconductivity. Among various SiC polytypes, 3C-SiC is predicted to be the most suitable substrate for the epitaxial growth of rhombohedral multilayer graphene. This thesis work mainly covers the sublimation growth of high-quality Si-face and C-face 3C-SiC on off-oriented 4H-SiC, exploring the proper parameter window for the growth of

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A comparative study of high-quality C-face and Si-face 3C-SiC(1 1 1) grown on off-oriented 4H-SiC substrates

Cited by 19 publications

References 36 publications

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

Epitaxial Graphene Growth on the Step‐Structured Surface of Off‐Axis C‐Face 3C‐SiC(1¯1¯1¯)

Growth of 3C-SiC and Graphene for Solar Water-Splitting Application

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