A comparative study of diffusion induced grain boundary migration, recrystallization and volume diffusion during the low temperature diffusion of Al into Cu and Au

Broeder, F. J. A. den; Klerk, M.; Vandenberg, J. M.; Hamm, R. A.

doi:10.1016/0001-6160(83)90105-0

Cited by 41 publications

(2 citation statements)

References 16 publications

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“…9) In various binary alloy systems, DIR occurs at temperatures where volume diffusion is frozen out but boundary diffusion occurs practically. The occurrence of DIR in the Cu(Al) system was reported also by Gueydan et al, 10) Vandenberg et al 11) and den Broeder et al 12) Here, the notation A(B) shows that a solute B diffuses into either a pure metal A or a binary AB alloy of the A-rich single-phase according to convention. In a previous study, 13) the kinetics of DIR in the Cu(Al) system was experimentally observed at T = 483543 K (210 270°C), and the observation was theoretically analyzed using a diffusion model.…”

Section: Microstructurementioning

confidence: 57%

Influence of Isothermal Annealing on Mechanical Properties of Cu-Clad Al Wire

2020

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The influence of isothermal annealing on mechanical properties of the Cu-clad Al (CA) wire was experimentally examined to better understand the annealing mechanisms that occur in the CA wire. In the experiment, the CA wire was prepared by drawing to decrease the diameter d from 10 mm to 2.9, 1.5 and 0.5 mm. The CA wires with these three different diameters were isothermally annealed at temperatures of 423603 K (150330°C) for various periods between 10.8 ks and 3456 ks (3 and 960 h). At room temperature, tensile tests were performed on the CA wire using an Instron type testing machine, and hardness tests were made on the Cu layer and the Al core of the CA wire utilizing a micro Vickers hardness testing machine. For the CA wire without annealing, the ultimate tensile strength s u is 231, 215 and 198 MPa for d = 0.5, 1.5 and 2.9 mm, respectively, and the elongation e u is 0.4, 0.4 and 1.2% for d = 0.5, 1.5 and 2.9 mm, respectively. Due to isothermal annealing, recovery and recrystallization take place in both the Cu layer and the Al core of the CA wire, and an intermetallic layer consisting of various CuAl compounds forms at the Cu/Al interface. The intermetallic layer promotes formation of cavity at the Cu/Al interface during the tensile test. As the thickness l of the intermetallic layer reaches to the critical thickness l m , s u attains to the minimum value, and e u takes the maximum value. Here, l m = 12 µm for d = 0.52.9 mm, respectively. For l > l m , however, s u is insensitive to l, but e u decreases with increasing thickness l. Thus, the appropriate combination of the annealing temperature and time is essentially important to realize the optimal mechanical properties of the CA wire.

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Section: Microstructurementioning

confidence: 57%

Influence of Isothermal Annealing on Mechanical Properties of Cu-Clad Al Wire

2020

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“…[47][48][49] Unlike the traditional DIGM process in which solute atom diffusion drives grain boundary motion, the applied stress would provide the driving force. The mass transport mechanism would have been vacancy diffusion along pre-existing grain boundaries that compensated for Sn atoms used to create the whisker.…”

Section: Details Of the Proposed Dynamic Recrystallization Model For mentioning

confidence: 99%

Dynamic Recrystallization (DRX) as the Mechanism for Sn Whisker Development. Part I: A Model

Vianco

Rejent

2009

J. Electron. Mater.

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A model is proposed that attributes whisker growth in metals and alloys to dynamic recrystallization (DRX) and, in particular, DRX at the material surface. Each step in the DRX process was correlated to the development of whiskers. The DRX model depends upon the details of the deformation process(es) responsible for new grain initiation and growth. The dependencies exhibited by DRX as a function of deformation strain rate, temperature, and microstructure correlate with the behaviors of whisker development. Anomalous or ultrafast diffusion mechanisms, either by themselves or associated with the deformation structures, provide the means of mass transport necessary to grow whiskers. In Part II of this study, the strain and rate kinetics data are determined for Sn. Parts I and II, together, provide a critical step towards developing a capability to predict the conditions that are likely to cause whisker growth in engineering applications.

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