A Comparative Study of AlGaN and InGaN Back-Barriers 
in Ultrathin-Barrier AlN/GaN Heterostructures

Abbas, J.M. All; Atmaca, G.; Narin, P.; Kutlu, E.; Sarikavak‐Lisesivdin, B.; Li̇şesi̇vdi̇n, S. B.

doi:10.1007/s11664-017-5540-7

Cited by 13 publications

(4 citation statements)

References 40 publications

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“…4), and prevents the injection of the electrons originated from the source into the buffer layers. Thus, the breakdown voltage of hardened structure is significantly improved, while that of the conventional structure is 530 V. However, the output characteristic of the proposed hardened structure is slightly reduced due to appropriate spacing between the IL and the barrier layer [45]. A new quantum well at the Al 0.1 Ga 0.9 N/GaN interface is formed due to the energy band difference between the IL and GaN middle buffer layer [37].…”

Section: Simulation Results and Analysis A Basic Characteristicsmentioning

confidence: 99%

An SEB Hardened AlGaN/GaN HEMT With Barrier Interlayer

Zhang

Wang

Wu³

et al. 2020

IEEE Access

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A new single event burnout (SEB) hardened AlGaN/GaN structure with a thin barrier interlayer (IL) is presented in this work. The proposed hardened structure is compared with the simulation results of the conventional structure. The comparative analysis demonstrates that the IL lifts the conduction band energy in buffer layer and a new quantum well is formed. The quantum well limits the electrons induced by heavy ion below the second channel into the first channel. Thus, better SEB performance is achieved compared with the conventional structure. Moreover, the breakdown characteristic of the new structure is significantly improved, while the output characteristic is slightly reduced. Under the condition that the two structures are irradiated vertically by heavy ion having the linear energy transfer (LET) value of 0.6 pC/µm, the SEB threshold voltage of the conventional structure is 280 V, while the hardened structure can achieve 375 V. INDEX TERMS GaN, high-electron mobility transistor (HEMT), single event burnout (SEB), barrier interlayer, SEB threshold voltage.

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Section: Simulation Results and Analysis A Basic Characteristicsmentioning

confidence: 99%

An SEB Hardened AlGaN/GaN HEMT With Barrier Interlayer

Zhang

Wang

Wu³

et al. 2020

IEEE Access

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“…The HEMT on sapphire substrate consists of a 20-nm-thick Al 0.23 Ga 0.77 N barrier layer and GaN channel, a 25-nm-thick AlGaN back barrier layer and a 2-µm-thick unintentionally doped GaN buffer, which the background carrier concentration is 1×10 16 cm −3 . Added SiN layer on the suiface of the device, it can reduce current collapse in HEMT [9] . The gate is fixed as Schottky contact and the gate length is 2 μm, the gate-source, gate-drain distances are 3 μm and 3 μm.…”

Section: Device Structure and Theoretical Modelsmentioning

confidence: 99%

Influence of graded back barrier on AlGaN/GaN HEMT and HEMT-based sensor

Liu

et al. 2023

Third International Conference on Sensors and Information Technology (ICSI 2023)

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The influence of AlGaN (Al=0.1) back barrier layer and graded back barrier layer on AlGaN/GaN high electron mobility transistor (HEMT) and HEMT based sensor was investigated by Silvaco TCAD. The results show that, both the AlGaN (Al=0.1) back-barrier HEMT and the graded AlGaN back-barrier HEMT can improve drain current and transconductance compared with conventional AlGaN/GaN HEMT. The HEMT with graded back barrier layer shows larger drain current and higher transconductance than that with AlGaN back barrier, which can be attributed to that the introduction of graded AlGaN back barrier layer increases the carrier concentration at the heterojunction interface and greatly reduces the effect of the parasitic channel. Correspondingly, the device performance should exhibit stronger dependence on surface charge. To confirm the inference, the sensing performance of the HEMTs without back barrier, with Al0.1Ga0.9N back barrier and with graded back barrier are simulated by adding surface charges on HEMT sensing area. The results indicate that the current sensitivity ΔID of the graded back-barrier HEMT caused by surface charge is largest, so the HEMT with a graded back barrier layer is more suitable for ion sensor than that conventional AlGaN/GaN HEMT and fixed Al-content back barrier.

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“…The GaN channel layer and buffer layer are unintentionally doped with background carrier concentration of 1 × 10 16 cm −3 . Device surface is passivated by using Si 3 N 4 dielectric film to reduce current collapse in HEMT [11] . The gate length, gate-to-source spacing and gate-to-drain spacing of the device are 1 µm, 1 µm and 8.5 µm, respectively.…”

Section: Device Structure and Theoretical Modelsmentioning

confidence: 99%

Enhancement-mode GaN HEMT using a combination structure of recessed-gate and p-GaN gate structure

Liu

et al. 2023

Third International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2023)

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With the development of high-speed RF circuits and high-voltage switches, the enhancement-mode (E-mode) GaN-based high electron mobility transistors (HEMTs) have become a hot topic in those fields. In this work, to improve the device performance of E-mode HEMT, p-GaN gate combined with recessed-gate was proposed. Moreover, the influence of structure parameters such as Al component and thickness of AlGaN barrier layer and the depth of recessed gate on device performance were investigated systematically by theoretical simulation. The results show that the saturation current increases and threshold voltage decreases with the increasing of Al component and thickness of AlGaN barrier layer. In addition, the saturation current decreases and threshold voltage increases with the increasing of the recessed gate depth. So, to obtain relative larger threshold voltage and saturation current, the Al component and thickness of the AlGaN barrier layer and the recessed gate depth for the p-GaN gate HEMT combined with recessed-gate structure should be moderate.

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A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures

Cited by 13 publications

References 40 publications

An SEB Hardened AlGaN/GaN HEMT With Barrier Interlayer

An SEB Hardened AlGaN/GaN HEMT With Barrier Interlayer

Influence of graded back barrier on AlGaN/GaN HEMT and HEMT-based sensor

Enhancement-mode GaN HEMT using a combination structure of recessed-gate and p-GaN gate structure

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