A comparative study of 30MeV boron4+ and 60MeV oxygen8+ ion irradiated Si NPN BJTs

Kumar, M.; Yashoda, T.; Dinesh, C.; Krishnakumar, K. S.; Jayashree, B.; Ramani,; Krishnaveni, S.

doi:10.1063/1.4918146

Cited by 2 publications

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“…Irradiation studies of different semiconductor devices such as Schottky diodes, p-n junction diodes, transistors, etc is an active area of research. [7][8][9][10][11][12] Silicon photo detectors are widely used in several electro optical instruments as well as in nuclear physics experiments. These environments demand the device to be sufficiently radiation hard as it will be exposed to very high dosages of radiations and need to work for tens of years with precision.…”

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In Situ Electrical Characteristics of 150 MeV Ag⁹⁺Ion Beam Induced Damage in Si Photo Detector

Kumar

Verma²,

Asokan

et al. 2016

ECS J. Solid State Sci. Technol.

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The effect of 150 MeV Ag9+ ion irradiation on electrical characteristics of Si photo detectors has been analyzed through in-situ Current voltage (I-V) and Capacitance voltage (C-V) measurements. Ideality factor (n), series resistance (Rs) and reverse leakage current (IR) are extracted from I-V characteristics. The value of n for pristine detector is found to be 1.24 and it has increased gradually along with the fluence. The value of IR for pristine is found to be 4.97 × 10−8 A and it increases to about three orders of magnitude at the fluence of 1 × 1013 ions/cm2 and further there is no observable change. Also, C-V characteristics exhibit considerable degradation. The value of capacitance decreased from 1.13 ×10−8 F to 3.97 × 10−10 F and also carrier concentration (NA) undergoes slight decrease with the increase in fluence. The 150 MeV Ag9+ ion induced displacements, vacancies in the bulk region mainly attribute to the observed degradation in the electrical characteristics. The ionization and displacement damage profiles were estimated from SRIM/TRIM (Stopping power and Range of Ion in Matter/Transport and Range of Ion in Matter) simulation codes. The observed degradations are explained in terms of TID (total ionization dose) and Dd (displacement damage dose).

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In Situ Electrical Characteristics of 150 MeV Ag⁹⁺Ion Beam Induced Damage in Si Photo Detector

Kumar

Verma²,

Asokan

et al. 2016

ECS J. Solid State Sci. Technol.

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SHI induced damage in electrical properties of silicon NPN BJTs

Kumar¹,

Kumar²,

Yashoda³

et al. 2016

AIP Conference Proceedings

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The investigation of radiation damage in Si microelectronic circuitry and devices are being carried out by various research groups globally. In particular the Si Bipolar junction transistors are very sensitive to high energetic radiation. In the present study, radiation response of NPN Bipolar junction transistor (2N3773) has been examined for 60 MeV B 4+ ion. Key electrical properties like Gummel, dc current gain and capacitancevoltage (C-V) characteristics of 60 MeV B 4+ ion irradiated transistor were studied before and after irradiation. Ion irradiation and subsequent electrical characterizations were performed at room temperature. Current voltage (I-V) measurements showed the increase in collector current for V BE ≤ 0.4 V as a function of fluence, which is due to B 4+ ion induced surface leakage currents. Base current is observed to be more sensitive than collector current and gain appears to be degraded with ion fluence. Also, C-V measurements shows that both built in potential and doping concentration increased significantly after irradiation.

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A comparative study of 30MeV boron4+ and 60MeV oxygen8+ ion irradiated Si NPN BJTs

Cited by 2 publications

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In Situ Electrical Characteristics of 150 MeV Ag⁹⁺Ion Beam Induced Damage in Si Photo Detector

In Situ Electrical Characteristics of 150 MeV Ag⁹⁺Ion Beam Induced Damage in Si Photo Detector

SHI induced damage in electrical properties of silicon NPN BJTs

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A comparative study of 30MeV boron4+ and 60MeV oxygen8+ ion irradiated Si NPN BJTs

Cited by 2 publications

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In Situ Electrical Characteristics of 150 MeV Ag9+Ion Beam Induced Damage in Si Photo Detector

In Situ Electrical Characteristics of 150 MeV Ag9+Ion Beam Induced Damage in Si Photo Detector

SHI induced damage in electrical properties of silicon NPN BJTs

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In Situ Electrical Characteristics of 150 MeV Ag⁹⁺Ion Beam Induced Damage in Si Photo Detector

In Situ Electrical Characteristics of 150 MeV Ag⁹⁺Ion Beam Induced Damage in Si Photo Detector