A comparative study between organic and inorganic resists in electron beam lithography using Monte Carlo simulations

Functionalized Ag Nanoparticles Embedded in Polymer Resists for High-Resolution Lithography

“…While pristine Terpolymer exposure, an interesting phenomenon is observed that changes the behavior of a common positive tone resist to a negative tone resist. It suggests that the overall polarity change in the Terpolymer matrix (Figure a) under high-energy irradiation and the presence of ultrafine Ag-NPs further accelerates this phenomenon . The mechanism for the negative tone formulation of the Ter–Ag resist is shown in Figure b.…”

“…It suggests that the overall polarity change in the Terpolymer matrix (Figure 3a) under high-energy irradiation and the presence of ultrafine Ag-NPs further accelerates this phenomenon. 35 The mechanism for the negative tone formulation of the Ter−Ag resist is shown in Figure 8b. When the Terpolymer was exposed to the irradiation in the absence of PAG, the hydroxyl group present in Terpolymer will undergo dehydration with another moiety and form ether linkage (C−O−C), which is insoluble in the developer, thereby forming a negative tone resist.…”

“…To support the elastic and inelastic energy electron-resist scattering interaction mechanism of the present work, a conceptual understanding of the numerical model reported by Henderson et al, is used (see SI-13). In elastic collision, electron–atom interaction can be explained by Rutherford scattering cross sections (σ el ) as σ el ∝ Z i , where Z i corresponds to the atomic number, while in the case of inelastic collision, the incident beams ionize the atom core/valance band and generate free electrons (called secondary electrons). If secondary electrons possess enough energy such as >50 eV, it initiates further physiochemical change inside the resist atoms …”

“…34 Hence, the sensitivity of the resist can be improved through the incorporation of a high irradiation absorber entity in the resist formulation. 35 In this regard, insertion of high-atomic-number nanomaterials in the resist formulation plays a significant role in high-speed lithography applications. 22,36 Also, the irradiation absorption cross sections (σ) of metal nanoparticles (such as Au, Ag, and Sn) are considerably greater than that of carbon or oxygen in resists, which eventually enhances the resist sensitivity.…”

“…Average of ∼20% irradiation can be absorbed by these films depending upon the sensitivity of resist formulation and volume over the substrate . Hence, the sensitivity of the resist can be improved through the incorporation of a high irradiation absorber entity in the resist formulation . In this regard, insertion of high-atomic-number nanomaterials in the resist formulation plays a significant role in high-speed lithography applications. , Also, the irradiation absorption cross sections (σ) of metal nanoparticles (such as Au, Ag, and Sn) are considerably greater than that of carbon or oxygen in resists, which eventually enhances the resist sensitivity. , Thus, the amalgamation of high-atomic-number metal nanoparticles in the polymer matrix may lead to the development of resists with better mechanical and chemical properties, high sensitivity, low line edge roughness/line width roughness (LER/LWR), and low CD through the enhanced absorption of exposure radiation. , Silver nanostructures that have been embedded in the polymer matrix were reported widely in the literature. , In this regard, silver nanoparticles were embedded in the SU8 photoresist that creates a conductive photoresist with various structures .…”