2022
DOI: 10.1016/j.ssc.2022.115006
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A comparative computational and experimental study of Al–ZrO2 thin films for optoelectronic applications

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Cited by 14 publications
(1 citation statement)
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“…[19] The introduction of Al permits bandgap engineering increment the absorption coefficient in t-ZrO 2 . [20] Lanthanide ions [21][22][23] have been shown to stabilize the ZrO 2 phase. Furthermore, lanthanide doping permits tuning of the optical emission.…”
Section: Introductionmentioning
confidence: 99%
“…[19] The introduction of Al permits bandgap engineering increment the absorption coefficient in t-ZrO 2 . [20] Lanthanide ions [21][22][23] have been shown to stabilize the ZrO 2 phase. Furthermore, lanthanide doping permits tuning of the optical emission.…”
Section: Introductionmentioning
confidence: 99%