A comparative analysis of structural, optical, and electrical characteristics of c-plane and a-plane ZnO:Al thin films fabricated by a pulsed laser ablation technique

Kumar, Prasad; Dharmaprakash, S. M.

doi:10.1016/j.apsusc.2022.153423

Cited by 6 publications

(3 citation statements)

References 59 publications

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“…Also, comparable AZO thin films at 3% wt have been measured by a z-scan technique, with the results showing β = 2.34 × 10 −4 cm/W and n 2 = 8.65 × 10 −8 cm 2 /W; that article also indicated a sign change from negative to positive [38]. Furthermore, it has been reported that Al-doped ZnO can present n 2 values ranging from −2.30 to 0.645 cm 2 /W; similarly, β values ranging from 4.51 × 10 −6 to 1.72 × 10 −6 cm/W were obtained, with the variation attributed to the plane orientation [39].…”

Section: Nonlinear Z-scan Measurements Resultsmentioning

confidence: 62%

Dual-Criteria Decision Analysis by Multiphotonic Effects in Nanostructured ZnO

Garcia-de-los-Rios,

Arano-Martinez,

Trejo-Valdez

et al. 2024

Micromachines

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Simultaneous interrogation of pump and probe beams interacting in ZnO nanostructures of a two-wave mixing is proposed for dual-path data processing of optical signals by nonlinear optical effects. An enhancement in third-order nonlinear optical properties was exhibited by Al-doped ZnO thin films. Multiphoton absorption and nonlinear refraction were explored by the z-scan technique at 532 nm with nanosecond pulses. The evolution of the optical Kerr effect in the ZnO thin films was analyzed as a function of the incorporation of Al in the sample by a vectorial two-wave mixing method. Electrical and photoconductive effects were evaluated to further characterize the influence of Al in the ZnO solid samples. Potential applications of nonlinear optical parameters for encoding and encrypting information in light can be envisioned.

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Section: Nonlinear Z-scan Measurements Resultsmentioning

confidence: 62%

Dual-Criteria Decision Analysis by Multiphotonic Effects in Nanostructured ZnO

Garcia-de-los-Rios,

Arano-Martinez,

Trejo-Valdez

et al. 2024

Micromachines

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“…A significant decrease in the transmission was observed for wavelengths longer than 1250 nm, but it did not decline below 55% up to 2000 nm. Such an observed decrease in transmittance in the near-infrared range was caused by the conductive property of the charge carriers in AZO [28][29][30].…”

Section: Figure 3 Transmission Spectra Of Obtained Azo Filmsmentioning

confidence: 97%

Application of two-element Zn-Al metallic target for deposition of aluminum-doped zinc oxide - analysis of sputtering process and properties of obtained transparent conducting films

Kiełczawa,

Wiatrowski,

Kiliszkiewicz

et al. 2024

Preprint

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This article presents an analysis of the reactive magnetron sputtering process using a two-element Zn-Al target, with a particular focus on its application for deposition of aluminum-doped zinc oxide layers for transparent electronics. The research encompasses the deposition of AZO layers on standard Corning 7059 glass and flexible Corning Willow® glass. In order to determine optimal process conditions, a detailed analysis of the target surface state was conducted based on the ratio of working gas to reactive gas (argon/oxygen). Significant influence of the sputtering atmosphere ratio on the Al/Zn atomic ratios in the deposited AZO layers was observed, subsequently affecting their optical and electrical properties. Layers deposited in an atmosphere with an 80/20 (argon/oxygen) ratio exhibited a high light transmission coefficient in the visible range (averaging 84%) and high layer resistivity (47.4 · 10-3 Ωcm). On the other hand, layers deposited in an atmosphere with an 84/16 (argon/oxygen) ratio showed low resistivity (1.9 · 10-3 Ωcm) and a light transmission coefficient in the visible range at 65%. The most promising results were obtained for layers deposited in an atmosphere with an 82/18 ratio, characterized by both high light transmission (83%) and low layer resistivity (1.4 · 10-3 Ωcm).

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“…In recent years, significant efforts by several researchers have been focused on the development of thin films of transparent conductive oxides (TCOs) at a lower cost. Three materials are featured: tin-doped indium oxide (In2O3:Sn or ITO) [1], aluminum-doped zinc oxide (ZnO:Al) [2], and fluorine-doped tin oxide (SnO2:F or abbreviated as FTO) [3] or antimony (SnO2:Sb) [4]. These oxides have three main characteristics in common: (i) the width of the optical gap is  3 eV, (ii) the stoichiometric compound is an insulator, and (iii) the degenerate material has a high carrier density.…”

Section: Introductionmentioning

confidence: 99%

Super-Hydrophobic F-Doped SnO2 (FTO) Nanoflowers Deposited by Spray Pyrolysis Process for Solar Cell Applications

Guermat¹,

Darenfad²,

Mirouh³

et al. 2022

J. Nano- Electron. Phys.

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Polycrystalline films of undoped and fluorine-doped SnO2 (FTO) are deposited on a glass substrate by spray pyrolysis at 400 °C. The effects of fluor concentration (8, 10 and 12 %) on the structural, morphological, optical and electrical properties of FTO films are studied. Our XRD results show that F-SnO2 still has the same rutile structure as undoped SnO2 with improved crystallization for doped films, with no other phase detected. The measured contact angles are  90° for undoped and 8 % F doped films, which confirms the hydrophilic character, while other doped (SnO2:10 % F and SnO2:12 % F) films show the hydrophobic character at contact angle values of  90° and the super-hydrophobic (CA = 140°) for SnO2:12 % F thin film. A higher transmittance value of 83 %, a wide band gap equal to 3.9 eV, and lower disorder (287.68 meV) are observed for the 12 % F doped SnO2 film. In addition, electrical resistivity (), carrier concentration (n) and Hall mobility () are determined from Hall effect measurements and it is found that all the elaborated thin films have n-type conductivity. The lowest resistivity of 2.245  10 -4 Ωcm and the highest Hall mobility of 24.55 cm 2 V -1 s -1 are obtained at an F concentration of 12 %. The results suggest that the FTO film at 12 %F can be used as a transparent conductive oxide of the front electrode for film solar cells.

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A comparative analysis of structural, optical, and electrical characteristics of c-plane and a-plane ZnO:Al thin films fabricated by a pulsed laser ablation technique

Cited by 6 publications

References 59 publications

Dual-Criteria Decision Analysis by Multiphotonic Effects in Nanostructured ZnO

Dual-Criteria Decision Analysis by Multiphotonic Effects in Nanostructured ZnO

Application of two-element Zn-Al metallic target for deposition of aluminum-doped zinc oxide - analysis of sputtering process and properties of obtained transparent conducting films

Super-Hydrophobic F-Doped SnO2 (FTO) Nanoflowers Deposited by Spray Pyrolysis Process for Solar Cell Applications

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