A Comparative Analysis of NBTI Variability and TDDS in GF HKMG Planar p-MOSFETs and RMG HKMG p-FinFETs

Parihar, Narendra; Anandkrishnan, R; Chaudhary, Ankush; Mahapatra, S.

doi:10.1109/ted.2019.2920666

Cited by 9 publications

(1 citation statement)

References 31 publications

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“…BAT can model the layout dependence (distance between STI to active) in planar, and fin dimension (length and width) dependence in FinFETs [20]- [22]. Moreover, the macroscopic BAT framework can also model the mean of measured stressrecovery kinetics from multiple small area or few fin devices [23], [24]. The various capabilities of BAT are summarized in a recent review [25].…”

Section: Introductionmentioning

confidence: 99%

Modeling of DC - AC NBTI Stress - Recovery Time Kinetics in P-Channel Planar Bulk and FDSOI MOSFETs and FinFETs

Choudhury

Parihar

Goel

et al. 2020

IEEE J. Electron Devices Soc.

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The physics-based BTI Analysis Tool (BAT) is used to model the time kinetics of threshold voltage shift (VT) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs and SOI FinFETs. BAT uses uncorrelated contributions from the trap generation at the channel/gate insulator interface (VIT) and gate insulator bulk (VOT), and hole trapping in pre-existing gate insulator bulk traps (VHT). The VIT kinetics is simulated by the Reaction-Diffusion (RD) model. The empirical VHT model used earlier is now substituted by the Activated Barrier Double Well Thermionic (ABDWT) model. The ABDWT model is also used to verify the time constant of the electron capture induced fast VIT recovery. Empirical equations are used for VOT. The enhanced BAT modeling framework is validated using measured data from a wide range of experimental conditions and across different device architectures and gate insulator processes.

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