A Comparative Analysis of Asymmetrical and Symmetrical Double Metal Double Gate SOI MOSFETs at the Zero-Temperature-Coefficient Bias Point

Kumar, Arvind; Gupta, Abhinav; Rai, Sanjeev

doi:10.1007/978-981-13-2685-1_49

Lecture Notes in Electrical Engineering

2018

DOI: 10.1007/978-981-13-2685-1_49

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A Comparative Analysis of Asymmetrical and Symmetrical Double Metal Double Gate SOI MOSFETs at the Zero-Temperature-Coefficient Bias Point

Arvind Kumar

Abhinav Gupta²,

Sanjeev Rai

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“…First time in this paper, performance of various analog/RF parameters of graded-channel dualmaterial double-gate (GCDMDG) MOSFET has been studied over wide range of temperature to find thermal stability point (TSP). Thermal stability point (TSP) is defined as the gate voltage at which parameters show minimum variation over wide range of temperature [17][18][19]. In the analysis of stability issue, temperature is varied at wide range (200-500 K).…”

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Thermal Stability Analysis of Graded-Channel Dual-Material Double-Gate (GCDMDG) MOSFET for Analog Application

Priya

Gupta²,

Agrawal

et al. 2021

Lecture Notes in Electrical Engineering

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The advancement of semiconductor industries is a driving force for MOSFET scaling. But as the dimensions of the device are reduced, short channel effects degrade the performance of the device [1]. The scaling of channel length reduces the controllability of gate over the channel region by increasing the charge sharing from source/drain. Due to this, the threshold voltage of MOS device becomes smaller. According to international technology roadmap for semiconductor (ITRS) [2], inclusion of new technologies is turning out to be a critical issue for sub-nanometer MOS devices. Researchers are still working with many device structures to find out a device that can be used in high-frequency application with low power consumption.Since past few decades, the double-gate (DG) MOSFET has shown potential in sub-nanometer regime due to its superb resistance to short channel effects (SCEs) [3]. Researchers have been working with various double-gate structures [4][5][6][7][8][9]. Many theoretical-, simulation-and experimental-based studies have been reported in the literature on DMDG MOSFET. Reddy et al. [10] have reported that the DMDG MOSFET can offer a noteworthy reduction in the hot carrier effects (HCEs). Increased drain breakdown voltage, reduced drain conductance, improved transconductance and desired threshold voltage roll off can be achieved with a DMDG MOSFET below 100 nm channel length. Other than above structures, there are more devices such as quadruple gate [11] MOSFET and Triple Metal Gate Recessed

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confidence: 99%

Thermal Stability Analysis of Graded-Channel Dual-Material Double-Gate (GCDMDG) MOSFET for Analog Application

Priya

Gupta²,

Agrawal

et al. 2021

Lecture Notes in Electrical Engineering

Self Cite

View full text Add to dashboard Cite

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A Comparative Analysis of Asymmetrical and Symmetrical Double Metal Double Gate SOI MOSFETs at the Zero-Temperature-Coefficient Bias Point

Cited by 1 publication

References 11 publications

Thermal Stability Analysis of Graded-Channel Dual-Material Double-Gate (GCDMDG) MOSFET for Analog Application

Thermal Stability Analysis of Graded-Channel Dual-Material Double-Gate (GCDMDG) MOSFET for Analog Application

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