A Compact Subthreshold Model for Short-Channel Monolayer Transition Metal Dichalcogenide Field-Effect Transistors

You, Wei-Xiang; Su, Pin

doi:10.1109/ted.2016.2564424

Cited by 27 publications

(32 citation statements)

References 13 publications

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“…Here, based on the high quality continuous MoS2 film we previously reported [65][66][67] (Fig. 3b, also see Moreover, the implementation of high-performance analog circuits requires device modeling with higher accuracy [72][73][74] . For our MoS2 FETs, we established a device model with analytic equations and a level-62 SPICE model, whose results are consistent with the experimental results (also see SI).…”

Section: Wafer-scale Mos2 Film Synthesis and Device Processingmentioning

confidence: 77%

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An Artificial Neutral Network Chip Based on Two-Dimensional Semiconductor

Chen

et al. 2020

Preprint

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Two-dimensional semiconductors can be used to build integrated circuits for running artificial neural networks (ANN) with higher energy efficiency. The implementation of an ANN with 2D semiconductors has been held back by the large-scale and high-quality transistors required for running machine learning algorithms. Here we demonstrate the first functional MoS2 analog ANN integrated circuit, including memory, multiply-and-accumulate (MAC), activation function, and weight update circuits. The ANN integrated circuit is realized through 818 field effect transistors (FETs) with wafer-scale and high-homogeneity MoS2 film. The large current on/off ratio and output linearity of these MoS2 FETs allow the realization of convolutional and activation function circuits with a few number of transistors. This ANN can be used for recognizing tactile digit, showing the recognition rate exceeding 97%. Our work demonstrates wafer-scale processing of a 2D semiconductor for building integrated circuits with the functions of AI computation.

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Section: Wafer-scale Mos2 Film Synthesis and Device Processingmentioning

confidence: 77%

“…3g. In the following section in this paper, we show how MoS2 can be used to build complex digital and analog circuits for AI computation, which is a major step forward beyond laboratory-level 2DLM devices 1,72,73 .…”

Section: Wafer-scale Mos2 Film Synthesis and Device Processingmentioning

confidence: 99%

An Artificial Neutral Network Chip Based on Two-Dimensional Semiconductor

Chen

et al. 2020

Preprint

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“…Several physical-based analytical models [7]- [9] have been proposed for current-voltage (I-V) characteristics of TMD FETs based on the drift-diffusion picture, without applicability to the ballistic and quasi-ballistic regimes [10]- [12]. To perform the ballistic transport effect, some compact models for short-channel devices [10], [11] were proposed but only for the subthreshold region. Furthermore, the work of [12] used an improved method of traditional virtual source (VS) model [13] and made the long-channel device models continue to work well at the nanoscale.…”

Section: Introductionmentioning

confidence: 99%

A Compact Model of MoS₂ Field-Effect Transistors From Drift-Diffusion to Ballistic Carrier Transport Regimes

Jiawei

Deng

Zhou

et al. 2020

IEEE J. Electron Devices Soc.

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In this letter, a compact model for charge and drain current in molybdenum disulfide (MoS 2) field-effect transistors (FETs) is developed, which is valid from ballistic to quasi-ballistic to drift-diffusion electronic transport regimes. Considering the influence of trap charges in MoS 2 transistors, a physical-based and analytical charge model is derived. Based on the virtual source model which applies to both ballistic and quasi-ballistic transports, the carrier number density and current expressions are combined to yield the current-voltage (I-V) characteristics. Furthermore, the presented model is validated by experimental data as well as recently reported simulations for MoS 2 FETs with different gate lengths. It shows that our model is accurate, straightforward , scalable and compatible for short-and long-channel devices. INDEX TERMS Molybdenum disulfide (MoS 2), charge model, current-voltage (I-V) characteristics.

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“…have developed short channel models for However, in [10], [11], authors have developed the framework for analyzing short channel effects in 2 − D material FETs using generalized scale length approach. Subthreshold I-V model for short-channel TMDFETs is proposed in [7].…”

Section: Introductionmentioning

confidence: 99%

“…Work in [8] does'nt include the impact of back gate fringing field effects, and is only applicable for symmetric TMD FET. In [7], although it claims it includes the fringing field effect but it includes the effect using fitting parameter which underestimates the impact and is only validated with drift diffusion based simulator. • The developed model is validated using NEGF based simulator, NanoTCAD ViDES [13] and Experimental data [14].…”

Section: Introductionmentioning

confidence: 99%

A Compact Short-Channel Analytical Drain Current Model of Asymmetric Dual-Gate TMD FET in Subthreshold Region Including Fringing Field Effects

2020

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A Compact Subthreshold Model for Short-Channel Monolayer Transition Metal Dichalcogenide Field-Effect Transistors

Cited by 27 publications

References 13 publications

An Artificial Neutral Network Chip Based on Two-Dimensional Semiconductor

An Artificial Neutral Network Chip Based on Two-Dimensional Semiconductor

A Compact Model of MoS₂ Field-Effect Transistors From Drift-Diffusion to Ballistic Carrier Transport Regimes

A Compact Short-Channel Analytical Drain Current Model of Asymmetric Dual-Gate TMD FET in Subthreshold Region Including Fringing Field Effects

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A Compact Subthreshold Model for Short-Channel Monolayer Transition Metal Dichalcogenide Field-Effect Transistors

Cited by 27 publications

References 13 publications

An Artificial Neutral Network Chip Based on Two-Dimensional Semiconductor

An Artificial Neutral Network Chip Based on Two-Dimensional Semiconductor

A Compact Model of MoS2 Field-Effect Transistors From Drift-Diffusion to Ballistic Carrier Transport Regimes

A Compact Short-Channel Analytical Drain Current Model of Asymmetric Dual-Gate TMD FET in Subthreshold Region Including Fringing Field Effects

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A Compact Model of MoS₂ Field-Effect Transistors From Drift-Diffusion to Ballistic Carrier Transport Regimes