A compact stacked-device output driver in low-voltage CMOS Technology

Abstract

This paper presents a high-voltage output stage suitable for square-wave drive in nanometer-scale CMOS technology. The output stage relies on device stacking to extend output swings reliably beyond that of the technology's supply rating. Two assisted-charging transistors are required for every additional stacked device to maintain reliability during switching transitions. Doubly-and triply-stacked drive circuits are designed using 2.5V thick-oxide devices in 65nm CMOS technology. Simulation results show that the two drivers operate reliably at 5V and 7.5V outputs respectively.

Design and characterization of a cascode switching stage for high frequency radiation hardened DC/DC converters for the supply of future pixel detectors

“…For the control of the large transistor gates, tapered buffers are implemented. Since a voltage swing of 2V DD is necessary to control Mp4 and Mn5, a two stage buffer circuit [2] is used. Both switching actions are analysed step by step and are shown in figures 4 and 5.…”