A Compact Model for Si-Ge Avalanche Photodiodes Over a Wide Range of Multiplication Gain

Wang, Binhao; Huang, Zhihong; Zeng, Xiaoge; Sorin, Wayne V.; Liang, Di; Fiorentino, Marco; Beausoleil, Raymond G.

doi:10.1109/jlt.2019.2913179

Cited by 22 publications

(24 citation statements)

References 22 publications

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“…where k A is the ionization-coefficient ratio. For Si-Ge based APDs, k A is in the range of 0.04-0.2 [3,28] and is relatively lower than for III-V devices (0.4 − 0.5). [29] Another noise term that is amplified by the APD gain is the laser's relative intensity noise (RIN) that describes how the light power fluctuates with time.…”

Section: Apd Noisementioning

confidence: 89%

“…[19] Avalanche photodiodes have a multiplication region and exhibit higher gain and hence higher effective responsivity due to the avalanche effect. [24] A schematic and crosssection micrograph of an APD structure [25] is shown in Figure 2. Figure 1 illustrates a conceptual DWDM link based on MRR devices and APDs that can be utilized for 400 Gb s −1 Ethernet systems.…”

Section: System Architecturementioning

confidence: 99%

“…APDs are designed for a maximum gain bandwidth product and hence the device bandwidth lowers above a certain maximum gain. [3] If the incoming signal is at a data rate higher than the device BW can support, then the APD output signal is dispersed in time and intersymbol interference occurs. As shown in Figure 1, the electrical current from the APD goes through the analog front-end and is converted to voltage before being sampled by the comparators.…”

Section: Eye Closure Penalty Due To Isi and Timing Jittermentioning

confidence: 99%

“…As shown in Figure 1, an efficient DWDM realization is possible with silicon photonic transceivers based on microring resonator (MRR) modulators and drop filters that have inherent wavelength multiplexing capabilities. [3] At the transmitter (TX) side, high quality factor MRR modulators driven by CMOS transmitters imprint independent highspeed data streams on specified wavelengths from the laser source. [4][5][6][7] These MRR modulators can support very high data rates, with a recent depletion-mode device achieving 128 Gb s −1 four-level pulse amplitude modulation (PAM4) operation.…”

Section: Introductionmentioning

confidence: 99%

“…[13] However, Si-Ge APDs containing a separateabsorption-charge-multiplication (SACM) structure have low operating voltage, high GBW, and lower excess noise factor than III-V devices. [3] Furthermore, its CMOS compatibility places it on a fast track over III-V-on-silicon devices to realize mass production in a CMOS foundry. Both CMOS circuitry and optical device bandwidth limitations make it difficult to support data rate scaling above 100 Gb s −1 with conventional binary non-return-to-zero (NRZ) modulation.…”

Section: Introductionmentioning

confidence: 99%

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Design Considerations for Energy Efficient DWDM PAM4 Transceivers Employing Avalanche Photodiodes

Kumar

Huang

Zeng

et al. 2020

Laser & Photonics Reviews

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An effective approach to increase per‐fiber bandwidth is to combine per‐wavelength four‐level pulse amplitude modulation (PAM4) with dense wavelength division multiplexing (DWDM). Silicon photonic transceivers based on microring resonator modulators and drop filters can allow for an efficient realization of this. Utilizing avalanche photodiodes (APDs) in the receiver front‐ends of these transceivers can significantly improve sensitivity, allowing for reduced source laser power and overall improved power efficiency. This paper analyzes the optical‐modulation amplitude (OMA) sensitivity of these APD‐based PAM4 receivers in a silicon photonic DWDM link. A comprehensive link budget is considered that takes into account various system losses and relevant noise sources. Modeling with a developed APD that has a maximum 230 GHz gain‐bandwidth product predicts sensitivity improvements at 32 to 64 Gb s−1 PAM4 ranging from 9.8 to 12 dB relative to a conventional p‐i‐n photodiode. Scaling the APD gain‐bandwidth to 310 GHz allows support of 112 Gb s−1 with −13.2 dBm OMA sensitivity at a BER of 2.4×10−4 with an APD gain of 10. Utilizing the presented architecture, link budget analysis predicts a 9.5x reduction in laser power with APDs and that 38 mW source laser optical power can support a four‐channel DWDM link operating at an aggregate 448 Gb s−1 data rate.

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Section: Apd Noisementioning

confidence: 89%

Section: System Architecturementioning

confidence: 99%

Section: Eye Closure Penalty Due To Isi and Timing Jittermentioning

confidence: 99%