A Compact, High-Power, 60 GHz SPDT Switch Using Shunt-Series SiGe PIN Diodes

Gong, Yunyi; Teng, Jeffrey W.; Cressler, John D.

doi:10.1109/rfic.2019.8701812

Cited by 7 publications

(5 citation statements)

References 8 publications

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“…Within these reconfigurable systems, RF switches assume a pivotal role as core devices. Considering factors such as integration compatibility, process complexity, and device size, the commonly employed types of RF switches typically include mechanical switches, semiconductor switches, and Micro-Electro-Mechanical Systems (MEMSs) [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 ].…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, semiconductor switches are better suited for high-speed switch applications and offer ease of integration into semiconductor substrates like silicon and gallium arsenide (GaAs). Although semiconductor switches like Positive–Intrinsic–Negative (PIN) diodes [ 4 , 5 , 6 ] and Field Effect Transistor (FET) switches [ 7 , 8 ] are known for their compact size and cost-effective integration into other front-end RF modules, they are also susceptible to distortion, leakage, voltage breakdown, and high non-linearity. Compared with mechanical switches and semiconductor switches, MEMSs have high isolation and good linearity.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

Qu,

Gao,

Wang

et al. 2024

Micromachines

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The global demand for radio frequency (RF) modules and components has grown exponentially in recent decades. RF switches are the essential unit in RF front-end and reconfigurable systems leading to the rapid development of novel and advanced switch technology. Germanium telluride (GeTe), as one of the Chalcogenide phase-change materials, has been applied as an RF switch due to its low insertion loss, high isolation, fast switching speed, and low power consumption in recent years. In this review, an in-depth exploration of GeTe film characterization is presented, followed by a comparison of the device structure of directly heated and indirectly heated RF phase-change switches (RFPCSs). Focusing on the prototypical structure of indirectly heated RFPCSs as the reference, the intrinsic properties of each material layer and the rationale behind the material selection is analyzed. Furthermore, the design size of each material layer of the device and its subsequent RF performance are summarized. Finally, we cast our gaze toward the promising future prospects of RFPCS technology.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

Qu,

Gao,

Wang

et al. 2024

Micromachines

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“…There are three techniques from literature that are mostly used to achieve high isolation in the design of SPDT switches; first, through configuration of the switch [4], [5]; second, switch element material and manufacturing process [6], [7]; and third, resonated switch element with inductance or capacitance elements [8], [9]. The first technique is widely used either by configuring it in the multiple cascaded shunt [4] Indonesian J Elec Eng & Comp Sci ISSN: 2502-4752  SPDT discrete switch design using switchable SIW resonators for … (Amirul Aizat Zolkefli)…”

Section: Introductionmentioning

confidence: 99%

“…or the combination of series and shunt elements [5], [10]. The multiple cascaded shunt SPDT is usually spaced with quarter wavelength of transmission lines and ideally used for high-power application.…”

mentioning

confidence: 99%

SPDT discrete switch design using switchable SIW resonators for millimeter wave MIMO transceiver

Zolkefli

Ahmad²,

Shairi³

et al. 2021

IJEECS

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A single pole double throw (SPDT) discrete switch design using switchable substrate integrated waveguide (SIW) resonators is proposed in this paper. It was designed for the millimeter wave multiple input multiple output (MIMO) transceiver. An example application is for 5G communication in 26 GHz band. High isolation between transmitter and receiver (in the transceiver) is needed in SPDT switch design to minimize any high radio frequency (RF) power leakage in the receiver. Therefore, the use of switchable SIW resonators can achieve higher isolation if compared to the conventional series SPDT switch, where the isolation of the proposed SPDT is depend on the bandstop response of the SIW resonators. The switchable SIW resonators can be switched between allpass and bandstop responses to allow the operation between transmit and receive modes. As a result, the simulation and measurement showed that the proposed SPDT switch produced an isolation higher than 25 dB from 24.25 to 27.5 GHz compared to the conventional design.

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“…Targeting at high linearity performance at K-band, an absorptive MMIC switch fabricated with GaN p-i-n diode was reported in [3], demonstrating an overall insertion loss of less than 3.4 dB, an input and output return loss better than 10.5 dB from 20 to 27 GHz and an input IP3 of 52 dBm at 20 GHz. With p-i-n diodes realized in 0.13-µm SiGe BiCMOS technology-a compact SPDT switch based on a novel shunt-series topology was reported in [4]. It showed a minimum insertion loss of 2 dB, an isolation better than 23 dB in range from 38 to 67 GHz and a power handling capability of 22 dBm P 1dB .…”

Section: Introductionmentioning

confidence: 99%

Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks

2020

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In this paper, we propose a new configuration for improving the isolation bandwidth of MMIC single-pole-double-throw (SPDT) passive high-electron-mobility transistor (HEMT) switches operating at millimeter frequency range. While the conventional configuration adopted open-stub loading for compensation of the off-state capacitance, radial stubs were introduced in our approach to improve the operational bandwidth of the SPDT switch. Implemented in 0.15 m GaAs pHEMT technology, the proposed configuration exhibited a measured insertion loss of less than 2.5 dB with better than 30 dB isolation level over the frequency range from 33 GHz to 44 GHz. In terms of the bandwidth of operation, the proposed configuration achieved a fractional bandwidth of 28.5% compared to that of 12.3% for the conventional approach. Such superior bandwidth performance is mainly attributed to the less frequency dependent nature of the radial stubs.

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A Compact, High-Power, 60 GHz SPDT Switch Using Shunt-Series SiGe PIN Diodes

Cited by 7 publications

References 8 publications

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

SPDT discrete switch design using switchable SIW resonators for millimeter wave MIMO transceiver

Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks

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