Abstract:An efficient static random access memory (SRAM) is presented in this paper. By using a newly developed architecture based on "preequalize" scheme, the geometry ratio between the pull-up and pull-down driver transistors of conventional 6-T cell will be similar to that of familiar inverter, thereby making the SRAM be provided with an improved read static noise margin (SNM) and a reduced cell area. The removal of DC path resulting from preequalize also yields significant power reduction. To avoid a write speed de… Show more
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