[1991] GaAs IC Symposium Technical Digest
DOI: 10.1109/gaas.1991.172705
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A compact 3W X-band GaAs MMIC amplifier based on a novel multi-push-pull circuit concept

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Cited by 3 publications
(1 citation statement)
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“…The MODAR X-band power MMIC was designed based on a baseline X-band power MESFET process which has been used for other previously described X-band power applications [5], [6]. The active element is a power MESFET fabricated using conventional GaAs processing techniques including oxygen damage implants for isolation, AuGe/Ni/Au alloyed ohmic contacts, a double ledge process to increase drain-gate breakdown voltage, direct-written 0.5-pm TiPtAu gates, ECR-deposited Si3N4 passivation, wax mounting onto sapphire discs for lapping to 4 mil final thickness, and reactively ion etched vias.…”
Section: B Process and Fet Descriptionmentioning
confidence: 99%
“…The MODAR X-band power MMIC was designed based on a baseline X-band power MESFET process which has been used for other previously described X-band power applications [5], [6]. The active element is a power MESFET fabricated using conventional GaAs processing techniques including oxygen damage implants for isolation, AuGe/Ni/Au alloyed ohmic contacts, a double ledge process to increase drain-gate breakdown voltage, direct-written 0.5-pm TiPtAu gates, ECR-deposited Si3N4 passivation, wax mounting onto sapphire discs for lapping to 4 mil final thickness, and reactively ion etched vias.…”
Section: B Process and Fet Descriptionmentioning
confidence: 99%