A Compact 2.1–39 GHz Self-Biased Low-Noise Amplifier in 65 nm CMOS Technology

Chen, Feng; Yu, Xiaopeng; Lim, Wei Meng; Yeo, Kiat Seng

doi:10.1109/lmwc.2013.2284778

Cited by 31 publications

(27 citation statements)

References 6 publications

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“…The experimental results of the proposed differential (IF) amplifier design compare favourably also with some earlier reported single-ended silicon based wideband amplifier designs [13][14][15][16][17][18] in terms of achieving a higher/similar peak gain or more wideband input/output matching. The presented differential SiGe amplifier has typically 1-2 dB higher in-band NF than those single-ended designs.…”

Section: Wwwietdlorgsupporting

confidence: 70%

SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers

Reyaz

Malmqvist

Gustafsson

et al. 2015

IET Microwaves, Antennas & Propagation

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This study presents the results of a high-gain and wideband differential intermediate frequency (IF) amplifier circuit design for a W-band passive imaging single-chip (down-conversion) receiver front-end. The cascaded two-stage IF amplifier was fabricated in a 0.13 μm SiGe BiCMOS process technology with 300 GHz/500 GHz f T /f max . In total six on-chip inductors are used in the input, output and inter-stage matching networks which enable relatively broadband RF properties together with a compact circuit size for the IF amplifier (the die area is 0.27 mm 2 incl. RF and DC pads). The broadband SiGe amplifier has a measured gain of 10-19.5 dB at 2-37 GHz (|s 11 | and |s 22 | ≤ −10 dB at 7-40 GHz and 8-35 GHz, respectively), noise figure of 6.3-8.0 dB at 2-26 GHz and output third order intercept points of 7-17 dBm at 1-40 GHz (the DC power consumption is 122 mW). To the authors' best knowledge, this work reports a first-time realisation of a differential IF amplifier made in a 0.13 μm SiGe BiCMOS technology that achieves such wideband impedance matching together with a high gain and reasonably low noise properties over a wide instantaneous bandwidth (|s 21 | = 15-19.5 dB at 3-26 GHz).

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Section: Wwwietdlorgsupporting

confidence: 70%

SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers

Reyaz

Malmqvist

Gustafsson

et al. 2015

IET Microwaves, Antennas & Propagation

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“…In 2013, Feng et al [19] realized compact self-biased wideband low noise amplifier (LNA) in Global Foundries 65 nm CMOS technology. Wideband input matching characteristic is achieved by placing a series gate inductor and a parallel tuning capacitor in the resistive-feedback network.…”

Section: In 2009 Moez and Elmasrymentioning

confidence: 99%

“…The concurrent tri-band PA design is based on the DA structure with capacitive coupling to enable large device size, while maintaining wide BW, gain cells with the enhanced-gain peaking inductor, and negative-resistance active notch filters for improved tri-band gain response. The concurrent tri-band PA exhibits measured small-signal gain around 15.4, 14.7 and 12.3 dB in the low band (10)(11)(12)(13)(14)(15)(16)(17)(18)(19), midband (23-29 GHz), and high band (33-40 GHz), respectively.…”

Section: In 2013 Kao Et Al [20]mentioning

confidence: 99%

Design and Performance Investigation of a New Distributed Amplifier Architecture for 40 and 100 Gb/s Optical Receivers

Fyath

Al-Bayati

2015

IJCT

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The design of distributed amplifiers (DAs) is one of the challenging aspects in emerging ultra high bit rate optical communication systems. This is especially important when implementation in submicron silicon complementary metal oxide semiconductor (CMOS) process is considered. This work presents a novel design scheme for DAs suitable for frontend amplification in 40 and 100 Gb/s optical receivers. The goal is to achieve high flat gain and low noise figure (NF) over the ultra wideband operating bandwidth (BW). The design scheme combines shifted second tire (SST) matrix configuration with cascode amplification cell configuration and uses m-derived technique. Performance investigation of the proposed DA architecture is carried out and the results are compared with that of other DA architectures reported in the literature. The investigation covers the gain and NF spectra when the DAs are implemented in 180, 130, 90, 65 and 45 CMOS standards.The simulation results reveal that the proposed DA architecture offers the highest gain with highest degree of flatness and low NF when compared with other DA configurations. Gain-BW products of 42772 and 21137 GHz are achieved when the amplifier is designed for 40 and 100 Gb/s operation, respectively, using 45 nm CMOS standard. Thesimulation is performed using AWR Microwave Office (version 10).

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“…Figure 1 illustrates the measured minimum NF of the recent published MMW LNAs in CMOS technologies. In [49], not only wideband performance but also moderate NF are achieved by using resistive-feedback network, which is composed of a series gate inductor and a parallel tuning capacitor, and inductive-series peaking technique. In [50], a magnetic coupled technique incorporated with the multi-cascode configuration is proposed.…”

Section: Low Noise Amplifier (Lna)mentioning

confidence: 99%

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

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Abstract:In this paper, the advances of the silicon-based millimeter-wave (MMW) monolithic integrated circuits (MMICs) are reported. The silicon-based technologies for MMW MMICs are briefly introduced. In addition, the current status of the MMW MMICs is surveyed and novel circuit topologies are summarized. Some representative MMW MMICs are illustrated as design examples in the categories of their functions in a MMW system. Finally, there is a conclusion and description of the future trend of the development of the MMW ICs.

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A Compact 2.1–39 GHz Self-Biased Low-Noise Amplifier in 65 nm CMOS Technology

Cited by 31 publications

References 6 publications

SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers

SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers

Design and Performance Investigation of a New Distributed Amplifier Architecture for 40 and 100 Gb/s Optical Receivers

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

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