A combined LEIS (low energy ion scattering)—LEED study of the V6O13(001) surface

Gryse, Roger De; Landuyt, José; Vermeire, A.; Vénnik, J.

doi:10.1016/0378-5963(80)90026-4

Cited by 11 publications

(2 citation statements)

References 15 publications

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“…The dielectric properties of SrTi03 indiffused with Bi203 were investigated with SEM, XPS, and TEM (302). The results of a LEED study of the V6013(001) surface as a function of oxygen coverage showed the outermost V atoms were adsorption sites for atomic oxygen in an on-top position (229). The quantitative analysis of Fe20, Fe304, and FeO by use of a derivative mode of AES and ion sputtering was reported (614).…”

Section: Semiconductorsmentioning

confidence: 99%

Forensic science

Brettell¹,

Saferstein²

1983

Anal. Chem.

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He Joined the company in 1959 as a radiochemist. His current work is directed toward developing advanced techniques for semiconductor materials characterization using electron beam (scanning Auger) and in microprobe techniques for chemical imperfections. X-ray topography, and scanning transmission electron microscopy techniques for physical imperfections. Larrabee earned a B.Sc. from the University ol Bishop's College In Quebec and an M.Sc. in chemistry from McMaster University in Ontario, Canada. He has published in analytical, electrochemical, and instrumentation journals and contributed chaplers In books. He has coauthored a book on the characterization of semiconductor materials and coedited a book on the characterization of solid surfaces. Larrabee is a member of the ACS, Electrochemical Society, SAS, and the Dallas Society of Analytical Chemists. R. Allen Bowling received his B.S. In Chemistry from the University ol Alabama and a Ph.D. In Chemistry from ihe University of Tennessee.He held an Alexander von Humboldt postdoctoral research position at the Institute ol Inorganic Chemistry, University of Frankfurt, West Germany, from March 1979 to July 1980. He joined Texas Instruments Incorporated in September 1980 as a process control engineer in a semiconductor processing area. In January 1982, he became a member of the technical staff in the Materials Characterization Branch of the Materials Science Laboratory of Texas Instruments, where he is presently responsible for Auger and XPS instrumentation. Bowling is a member of the Electrochemical Society and the American Vacuum Society.

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Section: Semiconductorsmentioning

confidence: 99%

Forensic science

Brettell¹,

Saferstein²

1983

Anal. Chem.

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“…7 The crystal structure of V 6 O 13 can be deduced from the V 2 O 5 stacking by removing each third O layer and successive shear over 1 /6[103]. The resulting stacking sequence 8 ; the unit cell of the V 2 O 5 (001) surface is 11.52 × 3.56 Å, and that of V 6 O 13 (001) surface is 11.92 × 3.68 Å. The a-b planes of both V 2 O 5 and V 6 O 13 are made up of a network of corner sharing zig-zag strings consisting of edge-shared polyhedra, forming closely packed dense planes.…”

Section: Introductionmentioning

confidence: 99%

Metalorganic chemical vapor deposition of highly oriented thin film composites of V₂O₅ and V₆O₁₃: Suppression of the metal–semiconductor transition in V₆O₁₃

Sahana

Shivashankar

2004

J. Mater. Res.

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Thin films of vanadium oxides were grown on fused quartz by metalorganic chemical vapor deposition using vanadyl acetylacetonate as the precursor. Growth at temperatures ⩾560 °C results in composites of strongly (00l)-oriented V2O5 and V6O13. The dominant phase of the film changes from V2O5 to V6O13, and back to V2O5, as the growth temperature is raised from 560 to 570 °C, then to 580 °C, as evidenced by x-ray diffraction and Rutherford backscattering analyses. This reentrant-type growth trend was interpreted on the basis of the small difference in the free energy of formation of V2O5 and V6O13 and the presence of metal–oxygen bonds in the precursor. In contrast with single-crystalline V6O13, the film predominantly composed of highly oriented single-crystalline platelets of V6O13 did not undergo the semiconductor–metal transition at −123° K, despite the connectivity being well above the percolation threshold. Instead, a semiconductor-to-semiconductor transition was observed in this film, which is explained in terms of the observed relaxation of the edges of all the platelets of metallic V6O13 to semiconducting V2O5.

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Some aspects of a quantitative LEIS study of the potassium segregation at the V₆O₁₃(001) surface

Gryse

Landuyt

Vandenbroucke

et al. 1982

Surface & Interface Analysis

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The influence on the low energy ion scattering (LEIS) signal intensities of a potassium segregation is studied at 800 K. It is possible to alter the potassium surface concentration by means of electron stimulated desorption. The higher this concentration, the lower the absolute count rate of the complete LEIS spectrum. This observation suggests that, in the case of helium scattering at the V6Ol3(0O1) surface, Auger neutralization processes and/or adiabatic resonant transitions are active. This fact allows the calculation of an upper and a lower limit for the ratio of the scattering cross sections for oxygen and vanadium. From a comparison with theoretical predictions based on the Moliere or Born-Mayer approximation of the Thomas-Fermi-Firsov potential, it follows that, under the given circumstances, low energy helium scattering is better described using the Moliere approximation. By using this potential model, it is also found that at 800K this potassium segregation is quite important giving rise to a steady state concentration of about one potassium atom per V6013(O01) surface unit cell.

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A combined LEIS (low energy ion scattering)—LEED study of the V6O13(001) surface

Cited by 11 publications

References 15 publications

Forensic science

Forensic science

Metalorganic chemical vapor deposition of highly oriented thin film composites of V₂O₅ and V₆O₁₃: Suppression of the metal–semiconductor transition in V₆O₁₃

Some aspects of a quantitative LEIS study of the potassium segregation at the V₆O₁₃(001) surface

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A combined LEIS (low energy ion scattering)—LEED study of the V6O13(001) surface

Cited by 11 publications

References 15 publications

Forensic science

Forensic science

Metalorganic chemical vapor deposition of highly oriented thin film composites of V2O5 and V6O13: Suppression of the metal–semiconductor transition in V6O13

Some aspects of a quantitative LEIS study of the potassium segregation at the V6O13(001) surface

Contact Info

Product

Resources

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Metalorganic chemical vapor deposition of highly oriented thin film composites of V₂O₅ and V₆O₁₃: Suppression of the metal–semiconductor transition in V₆O₁₃

Some aspects of a quantitative LEIS study of the potassium segregation at the V₆O₁₃(001) surface