A combined apparatus of scanning reflection electron microscope and scanning tunneling microscope

Maruno, Shigemitsu; Nakahara, Hiroyuki; Fujita, Shinobu S.; Watanabe, Heiji; Kusumi, Yukihiro

doi:10.1063/1.1147750

Cited by 35 publications

(14 citation statements)

References 10 publications

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“…Details of the apparatus have been described elsewhere. 15 Clean Si͑111͒ surfaces were prepared by flash direct-current heating at 1200°C. After setting a constant tunneling current of 0.3 nA and a negative tip bias of between Ϫ6 and Ϫ10 V for a duration of between 1 and 10 3 s, the STM tip was positioned over the surface to create an island.…”

Section: Methodsmentioning

confidence: 99%

Kinetics of tip-induced island growth on Si(111) with a scanning tunneling microscope

Shklyaev¹,

Shibata²

2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The kinetics of island growth on Si(111) with a scanning tunneling microscope (STM) is measured as a function of the tip–sample bias voltage. Two processes appear to be involved in the island growth in the center of the tip–sample interaction. Field-induced evaporation transfers atoms between the sample and the STM tip, and creates an area of incomplete surface structures with atoms mobile under the electric field. The second process is directional field-induced diffusion which transfers atoms along the surface. We derived a scaling relation for the initial island growth rate, the dipole moments of atoms on the surface, and the tip–sample bias voltage. This scaling relation was used to estimate the values of field–dipole interaction parameters from the kinetic data obtained for the initial island growth rate.

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Section: Methodsmentioning

confidence: 99%

Kinetics of tip-induced island growth on Si(111) with a scanning tunneling microscope

Shklyaev¹,

Shibata²

2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Details of the apparatus have been described elsewhere. 9 Clean Si surfaces were prepared by flash direct-current heating at 1200°C. To oxidize the surface, we raised the sample temperature from room temperature to 620°C for 10 min after oxygen had been introduced into the chamber at a pressure of 2ϫ10 Ϫ6 Torr.…”

Section: Masakazu Ichikawamentioning

confidence: 99%

Local structure of Ge nanoislands on Si(111) surfaces with a SiO2 coverage

Kolobov¹,

Shklyaev²,

Ōyanagi³

et al. 2001

Applied Physics Letters

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We have investigated the local structure and photoluminescence properties of ultrasmall Ge islands grown on Si(111) covered with SiO2. Scanning electron microscopy and transmission electron microscopy measurements show that the islands have a hemispherical shape, and depending on the growth temperature, can be either epitaxial or nonepitaxial. X-ray absorption near-edge structure measurements demonstrate that the nonepitaxial islands have the local structure of bulk diamond Ge and are very stable towards oxidation. The epitaxial islands are found to be partly oxidized, but no alloying with the Si substrate is observed. The nonepitaxial islands exhibit a photoluminescence peaked at 2.3 eV, which is typical of Ge nanocrystals embedded in SiO2. Possible mechanisms for the stability of the nonepitaxial Ge islands towards oxidation are discussed.

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“…Details of the apparatus have been described elsewhere. 7 N-type Si͑001͒ substrates ͑8-12 ⍀ cm; 12ϫ1.5 ϫ0.4 mm 3 ; miscut angle Ͻ1Ј͒ were used. Clean Si surfaces with double domains of 2ϫ1 reconstructed structures were prepared by heating in the preparation chamber, and were oxidized at 720°C in molecular oxygen gas 1ϫ10 2 Pa in pressure which was controlled by a variable leak valve.…”

Section: ͓S0003-6951͑97͒00233-7͔mentioning

confidence: 99%

Observation of oxide/Si(001)-interface during layer-by-layer oxidation by scanning reflection electron microscopy

Fujita¹,

Watanabe²,

Maruno³

et al. 1997

Applied Physics Letters

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We have found that terrace contrast of oxidized Si(001) substrate observed with a scanning reflection electron microscopy (SREM) is reversed by progress in thermal oxidation by one atomic layer of Si. The cause for such terrace contrast reversion is that reflection electron intensity depends on Si-bond direction at oxide/Si interface. This fact was confirmed by calculations based on a multiple scattering theory. The motion of oxide/Si-bulk interface can be, thus, observed by SREM. The reversion and continuous change of the terrace contrast indicate that oxidation occurs monolayer by monolayer on Si(001) substrate.

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A combined apparatus of scanning reflection electron microscope and scanning tunneling microscope

Cited by 35 publications

References 10 publications

Kinetics of tip-induced island growth on Si(111) with a scanning tunneling microscope

Kinetics of tip-induced island growth on Si(111) with a scanning tunneling microscope

Local structure of Ge nanoislands on Si(111) surfaces with a SiO2 coverage

Observation of oxide/Si(001)-interface during layer-by-layer oxidation by scanning reflection electron microscopy

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