A CMOS low noise transconductance amplifier for 1–6 GHz bands

Abstract

The linearity and noise requirements in multi-band multi-standard applications make the design of RF CMOS circuits very challenging. A wideband low-noise transconductance amplifier (LNTA) in CMOS 0.13 mm technology that operates between 1-6 GHz is presented. The LNTA is based on a shuntfeedback (SFB) amplifier with current-reuse scheme and employing the noise-canceling technique used in low-noise amplifier designs for wideband input matching. Simulation results show a good trade-off between noise and power-consumption across the frequency span with an average noise figure of 4 dB and a minimum transconductance of 42 mS over the entire band. Performance variations were estimated at 2 GHz with Monte Carlo analysis. The total power consumption is 8.4 mW from 1.2 V supply.

Design of ultra‐low noise, wideband low‐noise amplifier for highly survival radar receiver

“…The general topology of LNA consists of three stages: the input matching network, the amplifier itself and output matching network [1]. The prime requirement of LNA is the lowest possible noise figure (NF) with a reasonable gain to increase the signal-to-noise ratio (SNR), marginally dynamic range of RF receiver front end and the different techniques have been reported in the literature [5][6][7].…”