A CMOS class-A 65nm power amplifier for 60 GHz applications

Quémerais, Thomas; Moquillon, L.; Pruvost, Sébastien; Fournier, Jean‐Michel; Benech, Philippe; Corrao, N.

doi:10.1109/smic.2010.5422847

Cited by 17 publications

(14 citation statements)

References 4 publications

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“…TFMS Transmission Lines. TFMS have been widely used in millimeter-wave CMOS PA design as matching elements [25][26][27] thanks to their implementation simplicity. However, the performance improvement which can be provided by TFMS, as compared with the use of lumped elements, is very limited because of their poor quality factor especially at high frequencies (e.g., Q < 10 at 60 GHz in [25]).…”

Section: B Matching Network Optimizationmentioning

confidence: 99%

“…The signal conductor strip of the TFMS was placed on the top layer M 7 stacked with the top layer. A meshed ground plan was formed by stacking M 1 and M 2 layers so as to shield completely from the low-resistivity silicon substrate [26].…”

Section: B Matching Network Optimizationmentioning

confidence: 99%

“…mA/lm) and V ds,sat is the saturated voltage of the nMOS-FET ($0.3 V).The transistor width for the other stages was determined using three criteria:i. the widths should be a multiple of W f , ii. W 1 < W 2 < W 3 for linearity consideration[26], iii. OCP 1dB,1 >Input Compression Point (ICP) 1dB,2 and OCP 1dB,2 > ICP 1dB,3…”

mentioning

confidence: 99%

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Millimeter-wave CMOS power amplifier using slow-wave transmission lines

Tang

Pistono

Fournier

et al. 2015

2015 Asia-Pacific Microwave Conference (APMC)

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A three-stage 60-GHz power amplifier (PA) has been implemented in a 65 nm Complementary Metal Oxide Semiconductor (CMOS) technology. High-quality-factor slowwave coplanar waveguides (S-CPW) were used for input, output and inter-stage matching networks to improve the performance. Being biased for Class-A operation, the PA exhibits a measured power gain G of 18.3 dB at the working frequency, with a 3-dB bandwidth of 8.5 GHz. The measured 1-dB output compression point (OCP 1dB ) and the maximum saturated output power P sat are 12 dBm and 14.2 dBm, respectively, with a DC power consumption of 156 mW under 1.2 V voltage supply. The measured peak power added efficiency PAE is 16%. The die area is 0.52 mm 2 (875 3 600 lm 2 ) including all the pads, whereas the effective area is only 0.24 mm

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Section: B Matching Network Optimizationmentioning

confidence: 99%

Section: B Matching Network Optimizationmentioning

confidence: 99%

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Millimeter-wave CMOS power amplifier using slow-wave transmission lines

Tang

Pistono

Fournier

et al. 2015

2015 Asia-Pacific Microwave Conference (APMC)

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“…TFMS (Thin Film MicroStrip) Tlines are widely used in the design of millimeter-wave power amplifiers in CMOS technologies [12][13][14][15][16][17][18] because of their implementation simplicity. However, the improvement of performance which can be provided by this kind of Tlines is very limited because of its poor quality factor Q (e.g.…”

Section: A) Tfms Transmission Linesmentioning

confidence: 99%

Enhanced performance of a 60-GHz power amplifier by using slow-wave transmission lines in 40 nm CMOS technology

Tang¹,

Pistono²,

Ferrari³

et al. 2011

Int. j. microw. wirel. technol.

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Enhanced performance of a 60-GHz power amplifier by using slow-wave transmission lines in 40 nm CMOS technology xiao-lan tang, emmanuel pistono, philippe ferrari and jean-michel fournier This paper shows the contribution of slow-wave coplanar waveguides on the performance of power amplifiers operating at millimeter-wave frequencies in CMOS-integrated technologies. These transmission lines present a quality factor Q two to three times higher than that of the conventional microstrip lines at the same characteristic impedance. To demonstrate the contribution of the slow-wave transmission lines on integrated millimeter-wave amplifiers performance, two Class-A single-stage power amplifiers (PA) operating at 60 GHz were designed in standard 40 nm CMOS technology. One of the power amplifiers incorporates only the microstrip lines, whereas slow-wave coplanar transmission lines are considered in the other one. Both amplifiers are biased in Class-A operation, drawing, respectively, 22 and 23 mA from 1.2 V supply. Compared to the power amplifier using conventional microstrip transmission lines, the one implemented with slow-wave transmission lines shows improved performances in terms of gain (5.6 dB against 3.3 dB), 1 dB output compression point (OCP 1dB : 7 dBm against 5 dBm), saturated output power (P sat : .10 and 8 dBm, respectively), power-added efficiency (PAE: 16% instead of 6%), and die area without pads (S die : 0.059 mm 2 against 0.069 mm 2 ).

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“…These systems require linear power amplifiers (PAs) to amplify the input signal linearly. Class-A amplifiers have the lowest signal distortion among the different classes of operation, but exhibit power added efficiency, (PAE), below 50 % [1]. Switching-mode PAs (SMPAs) [2], [3] exhibit high efficiency.…”

Section: Introductionmentioning

confidence: 99%

Analysis and design of an unconditionally stable common-drain class-B RF power amplifier in 90 nm CMOS technology

Khan

Kalim

Negra

2011

2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits

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Modern communication networks demand power amplifiers (PAs) which are efficient and have low distortion. The common drain amplifier has the potential to become a linear amplifier with good efficiency, when biased at or above class-B. The main challenge is to provide unconditional stability while still maintaining adequate transducer gain so that the power added efficiency (PAE) will not be compromised by low gain and, thus, resulting in better overall performance. In this contribution, analysis and design of an unconditionally stable common drain class-B PA for the LTE band at 2.55 GHz in 90 nm CMOS is presented. The simulation results show that the designed PA can deliver an output power of more than 27.2 dBm with gain of 6.1 dB and PAE greater than 43.0 % when operated from 2.5 V supply. The circuit has a third order intermodulation distrotion suppression of 32.0 dBc at 3 dB input back-off.Index Terms-CMOS, class-B, linearity, stability, load transformation network (LTN), power added efficiency (PAE).

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A CMOS class-A 65nm power amplifier for 60 GHz applications

Cited by 17 publications

References 4 publications

Millimeter-wave CMOS power amplifier using slow-wave transmission lines

Millimeter-wave CMOS power amplifier using slow-wave transmission lines

Enhanced performance of a 60-GHz power amplifier by using slow-wave transmission lines in 40 nm CMOS technology

Analysis and design of an unconditionally stable common-drain class-B RF power amplifier in 90 nm CMOS technology

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