A closed UHV focused ion beam patterning and MBE regrowth technique

Muessig, H.J.; Hackbarth, T.; Brugger, H.; Orth, Andreas; Reithmaier, J.P.; Forchel, A.

doi:10.1016/0921-5107(95)01397-0

Cited by 9 publications

(5 citation statements)

References 9 publications

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“…This is more than three times larger than expected for penetration depths in amorphous materials and is caused by channeling effects in the ͓100͔ oriented semiconductors. 11,15 …”

Section: System Performancementioning

confidence: 98%

“…Regrowth experiments show that implantation induced isolation is sustained following a MBE growth process at 550°C without significant decrease of the sheet resistivity. 11 The spatial resolution was tested by restricting the injection current path in a resonant tunneling diode ͑RTD͒. For lateral current restriction a mesa structure was implanted with an unimplanted area in slit geometry at the center.…”

Section: Buried Current Path Restrictionmentioning

confidence: 99%

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Focused ion beam implantation for opto- and microelectronic devices

König¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Focused ion beam implantation is a powerful technology for the fabrication of opto- and microelectronic devices. Optoelectronic devices like gain coupled distributed feedback lasers and nonabsorbing waveguides can be defined in semiconductor heterostructures by the band gap shift due to highly spatially resolved implantation induced thermal intermixing. Single mode emitting devices were fabricated with emission wavelengths of 1 and 1.55 μm in the material systems GaInAs/(Al)GaAs and GaInAsP/InP, respectively. Band gap shifts of more than 65 meV could be reached in GaInAsP quantum film structures which simplifies the integration of nonabsorbing waveguide sections with, e.g., lasers, modulators, and detectors. In highly doped semiconductor layers semi-insulating areas could be defined by focused ion implantation. Depletion lengths down to 50 nm can be controlled and were demonstrated on current injection restricted resonant tunneling devices. By using this technique collector-up heterobipolar transistors were fabricated which exhibit current amplification factors up to 45.

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“…This is more than three times larger than expected for penetration depths in amorphous materials and is caused by channeling effects in the ͓100͔ oriented semiconductors. 11,15 …”

Section: System Performancementioning

confidence: 98%

Section: Buried Current Path Restrictionmentioning

confidence: 99%

Focused ion beam implantation for opto- and microelectronic devices

König¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

“…In addition to the creation of a damage network near the surface, which is removed by the above discussed wet chemical etching process, an essential part of the ions penetrate much deeper into the semiconductor due to channeling in crystal direction. 11,12 In (100) InP the penetration depth for 100 keV Ga ions is in the range of about 300 nm. If quantum wells are within this depth, the channeled ions can induce thermal intermixing effects in spatial alignment to the etched patterns.…”

Section: Maskless Patterningmentioning

confidence: 99%

Focused Ion Beam Technology for Optoelectronic Devices

Reithmaier¹,

Bach²,

Forchel³

2003

AIP Conference Proceedings

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“…5 An emitter ͑here a doped GaAs layer͒ is then regrown following the implantation. Therefore, these oscillators are usually small nonplanar chemically wet etched pillars, with electrical contacts made to the top of each individual diode.…”

Section: Introductionmentioning

confidence: 99%

In situ Ga+ focused ion beam definition of high current density resonant tunneling diodes

See¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inSystematic studies of SiGe ∕ Si islands nucleated via separate in situ or ex situ Ga + focused ion beam-guided growth techniques Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecularbeam epitaxy J. Appl. Phys. 96, 747 (2004); 10.1063/1.1755436 151 kA/cm 2 peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications Appl.Results are presented for small embedded tunnel area ͑Ͻ100 m 2 ͒, high current density resonant tunneling diodes ͑RTDs͒ fabricated using a combination of in situ Ga ϩ focused ion beam ͑FIB͒ implantation with molecular beam epitaxial regrowth. In such devices, the tunnel current path is defined by the highly resistive disordered lattice ͑from the Ga ϩ FIB lithography͒ and confined to the undamaged regions. Postgrowth optical processing is then straightforward to perform. The success of this novel technique is demonstrated by systematically varying the wet etched mesa dimensions, the FIB defined tunneling area, and the ion implantation dose, with experimental data discussed in each case. Furthermore, it is shown that this approach allows a common and easy connection to an array of individual RTDs, which is of considerable interest for microwave and millimeter wave power combining applications.

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A closed UHV focused ion beam patterning and MBE regrowth technique

Cited by 9 publications

References 9 publications

Focused ion beam implantation for opto- and microelectronic devices

Focused ion beam implantation for opto- and microelectronic devices

Focused Ion Beam Technology for Optoelectronic Devices

In situ Ga+ focused ion beam definition of high current density resonant tunneling diodes

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