2022
DOI: 10.3390/electronics11030310
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A Class-F Based Power Amplifier with Optimized Efficiency in Triple-Band

Abstract: A Class-F mode-based power amplifier (PA) with optimized efficiency in triple-band was designed using a simple and systematic approach. By considering the second and third harmonic terminations of the PA, the relationship between the output impedance design space and the drain efficiency (DE) is extracted by large-signal model simulation. Then, a low-pass matching topology is utilized for the triple-band efficiency optimization. The method is justified by both simulation and measurement of a triple-band PA to … Show more

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Cited by 3 publications
(2 citation statements)
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“…The Doherty power amplifier (DPA) is based on the principle of active load modulation [3] to maintain high efficiency at OBO. A concurrent multi-band Doherty power amplifier [4,5] can achieve a reasonable allocation of spectrum resources and reduce interference to adjacent channel signals. Compared with the traditional multi-channel single-frequency power amplifier, the concurrent dual-band Doherty design structure can also effectively reduce system size and cost as well as have good back-off efficiency [6].…”
Section: Introductionmentioning
confidence: 99%
“…The Doherty power amplifier (DPA) is based on the principle of active load modulation [3] to maintain high efficiency at OBO. A concurrent multi-band Doherty power amplifier [4,5] can achieve a reasonable allocation of spectrum resources and reduce interference to adjacent channel signals. Compared with the traditional multi-channel single-frequency power amplifier, the concurrent dual-band Doherty design structure can also effectively reduce system size and cost as well as have good back-off efficiency [6].…”
Section: Introductionmentioning
confidence: 99%
“…A transmission line is added between the two stages to adjust the impedance of the second and third harmonics without changing the impedance at the fundamental frequency. Harmonic control is very effective for improving the efficiency of RF transistors, especially when using the Class-F [13][14][15][16][17] work model.…”
Section: Introductionmentioning
confidence: 99%