A class-E power amplifier based on an extended resonance technique

Martin, A.L.; Mortazawi, Amir

doi:10.1109/22.817476

Cited by 13 publications

(2 citation statements)

References 14 publications

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“…In this paper, we describe in detail the transmission-line topology, design methodology, simulated waveforms, and performance, as well as the implementation and performance of the distributed microstrip prototype operating at 1 GHz. 1 Recent developments in the literature include a transmission-line circuit utilizing a series line and single shunt stub to achieve class-E operation [8], and a power-combining four-transistor class-E amplifier [9] employing GaAS MESFETs to obtain an output power 2.95 W at 935 MHz, with a power-added efficiency of 67%.…”

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confidence: 99%

Transmission-line load-network topology for class-E power amplifiers

Wilkinson

Everard

2001

IEEE Trans. Microwave Theory Techn.

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Abstract-Class-E amplifiers are a type of switching amplifier offering very high efficiency approaching 100% . In this paper, a topology and design methodology, which could be used for a transmission-line implementation of a class-E power amplifier, is presented. A simple transmission-line class-E load network is proposed that offers combined transformation of the load resistance down to a suitable level, as well as simultaneous suppression of harmonics in the load. The load network was developed and tested with the aid of a time-domain simulator (i.e., SPICE). A microstrip layout was designed and a first prototype was built operating at 1 GHz utilizing a field-effect transistor as the switching device. A drain efficiency of 72% was measured for our prototype after tuning, although better performance can be expected with an improved switching transistor and careful tuning of the load network.

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confidence: 99%

Transmission-line load-network topology for class-E power amplifiers

Wilkinson

Everard

2001

IEEE Trans. Microwave Theory Techn.

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“…Class-E switched mode of operation has recently gained a lot of attention at different frequency ranges [10], [11]. Switched-mode amplifier operation was developed by Artym [12], Gruzdev [13], Popov [14], Kozyrev [15], and Sokal [16] independently for high-frequency (HF) amplifiers, and extended to microwave frequencies in a transmission-line circuit by Mader et al [8], Mader and Popović [17], Bryerton et al [18], and Raab et al [19].…”

Section: Class-e Amplifier Designmentioning

confidence: 99%

An efficient x -band 16-element spatial combiner of switched-mode power amplifiers

Pajic

Popović

2003

IEEE Trans. Microwave Theory Techn.

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This paper describes the design, implementation, and characterization of a high-efficiency 10-GHz amplifier antenna array for spatial power combining. An average drain efficiency of 70% at 162 W effective isotropic radiated power, or about 1.5 W of transmitted power, is measured for an array of 16 amplifiers consisting of four four-element subarrays. The power-combining efficiency of the 16-element array is above 79%. The active device is a low-cost GaAs MESFET with a maximum available power in class A of 21 dBm. The single class-E power amplifier delivers 20.3 dBm with 67% drain efficiency and 58% power-added efficiency.

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A new lumped-elements power-combining amplifier based on an extended resonance technique

Martin

Mortazawi

2000

IEEE Trans. Microwave Theory Techn.

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A class-E power amplifier based on an extended resonance technique

Cited by 13 publications

References 14 publications

Transmission-line load-network topology for class-E power amplifiers

Transmission-line load-network topology for class-E power amplifiers

An efficient x -band 16-element spatial combiner of switched-mode power amplifiers

A new lumped-elements power-combining amplifier based on an extended resonance technique

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