A class‐E CMOS RF power amplifier with cascaded class‐D driver amplifier

Jang, Jaeshin; Lee, Hongtak; Park, Changkun; Hong, Songcheol

doi:10.1002/mop.23106

Cited by 6 publications

(3 citation statements)

References 6 publications

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“…If the designed power amplifier is in switching mode, a driver stage supports the transistors of the power stage to operate as switch while the power stage generates high output power. One well‐known driver stage, due to its small size, is the Class‐D type . Figure (a) shows simple schematics of the Class‐D type driver stage.…”

Section: Typical Class‐d Type Driver Stagementioning

confidence: 99%

An X‐band CMOS power amplifier with a driver stage using a shot‐through current rejection technique

Park

2014

Micro & Optical Tech Letters

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In this study, we design an X‐band switching‐mode CMOS power amplifier using 0.13‐μm RF CMOS process. The power amplifier is composed of driver and power stages. In this study, we focus on the power consumption of the driver stage. To minimize power consumption, we propose a shot‐through current rejection technique for the Class‐D amplifier used as a driver stage of the CMOS power amplifier. We split the gate bias of the NMOS and PMOS of the Class‐D amplifier using DC‐blocking capacitors to control the shot‐through current. From the measured results, we successfully prove the feasibility of the proposed technique. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1159–1162, 2014

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Section: Typical Class‐d Type Driver Stagementioning

confidence: 99%

An X‐band CMOS power amplifier with a driver stage using a shot‐through current rejection technique

Park

2014

Micro & Optical Tech Letters

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“…The driver stage is designed to be of class‐D type. The feedback resistor between the input and the output of the driver stage is used to moderate the process variations . The supply voltage of the driver stage is identical to that of the power stage.…”

Section: Proposed Structure Of the Power Stagementioning

confidence: 99%

1.9-GHz CMOS power amplifier using a current source to enhance its dynamic range

Seo

Lim

Ahn

et al. 2014

Microw. Opt. Technol. Lett.

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signal power arriving from the tag (0 dBm equivalent isotropic radiation power (EIRP) emitted@2.15 GHz) and the unradiated power delivered by the CRLH feed structure as measured at the detector was plotted as the dotted line in Figure 8. For a composite input power level of about 230 dBm, the detection sensitivity of the backscatter modulated system is about 24 dB better than that available through direct detection, that is, about a six times range improvement. CONCLUSIONWe have shown that a lumped loaded microstrip CRLH antenna when combined with a detector diode can act as a compact sensor for frequency scanning localization. The structure presented here requires a very narrow range of excitation frequencies suggesting its potential use within the narrow spectrum available to RFID and Instrument, Scientific and Measurement (ISM) applications. REFERENCES 1. H. Liu, H. Darabi, P. Ganerjee, and J. Liu, Survey of wireless indoor positioning techniques and systems, IEEE Trans Syst Man Cybern C 5. S. Lim, C. Caloz and T. Itoh, Metamaterial-based electronically controlled transmission-line structure as a novel leaky-wave antenna with tunable radiation angle and beamwidth, IEEE Trans Microwave Theory Techn 53 (2005), 161-173. 6. A. Lai, C. Caloz, and T. Itoh, Composite right/left-handed transmission line metamaterials,ABSTRACT: In this work, we propose a 1.9-GHz CMOS power amplifier using 0.18-mm RF CMOS technology. The amplifier operates in switching mode. To enhance the dynamic range of the switching mode amplifier, we propose a structure for the power stage in which a current source is used. In low-output power regions, the current source operates in the saturation region to limit the current flowing through the power stage of the amplifier and, hence, to enhance the dynamic range. Conversely, in high-output power regions, the current source operates in the triode region to minimize the parasitic resistance induced by the transis-tor and, hence, to maximize the maximum output power. We designed a power amplifier to prove the feasibility of the proposed structure using the current source. From the measured results, we successfully verify the feasibility of the proposed topology.

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“…1. These feedback resistors can provide stable DC bias voltage to the class-D amplifiers and they can reduce DC current consumption compared with a bias technique with dividing resistors [3]. The driver stage needs to be optimized at 5 GHz in order to obtain required power gain with minimum power consumption.…”

Section: Circuit Designmentioning

confidence: 99%

A self-biasing class-E power amplifier for 5-GHz constant envelope modulation system

Yamashita

Kanemoto

Kanaya

et al. 2013

IEICE Electron. Express

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This paper describes the design of 5-GHz fully integrated self-biasing power amplifier (PA) for wireless transmitter applications in a 0.18-µm CMOS technology. The proposed class-E PA employs the cascode topology with a self-biasing technique to reduce device stress. Three cascaded class-D driver amplifiers are used to actualize the sharp switching at the class-E power stage. All device components are integrated on chip and the chip area is 1.0×1.3 mm 2 . The measurement results indicate that the PA delivers 16.4 dBm output power and 35.4% power-added efficiency with 2.3 V power supply voltage into a 50 Ω load.

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A class‐E CMOS RF power amplifier with cascaded class‐D driver amplifier

Cited by 6 publications

References 6 publications

An X‐band CMOS power amplifier with a driver stage using a shot‐through current rejection technique

An X‐band CMOS power amplifier with a driver stage using a shot‐through current rejection technique

1.9-GHz CMOS power amplifier using a current source to enhance its dynamic range

A self-biasing class-E power amplifier for 5-GHz constant envelope modulation system

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