A circuit model for a thin film ferroelectric memory device

Kulkarni, A. K.; Röhrer, Georg; Narayan, S. P. Atul; McMillan, L. D.

doi:10.1080/00150199108007932

Cited by 13 publications

(4 citation statements)

References 3 publications

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“…( 4) for details). Another modelling approach relates to the polarization switching current of the ferroelectric [111,112,113,114]. Here the current is modelled based on the rate equations of the switching dipoles [114], pre-calculated polarization current [113] and first order relaxation processes [111,112].…”

Section: Circuit Model Of Ferroelectric Devicesmentioning

confidence: 99%

“…Another modelling approach relates to the polarization switching current of the ferroelectric [111,112,113,114]. Here the current is modelled based on the rate equations of the switching dipoles [114], pre-calculated polarization current [113] and first order relaxation processes [111,112]. On the other side the parallel elements method [115,116] emulates the structure of a ferroelectric material as a parallel circuit of several ferroelectric domains.…”

Section: Circuit Model Of Ferroelectric Devicesmentioning

confidence: 99%

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A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

et al. 2017

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Abstract. The discovery of ferroelectric properties of binary oxides revitalized the interest in ferroelectrics and bridged the scaling gap between the state-of-the-art semiconductor technology and ferroelectric memories. However, before hitting the markets, the origin of ferroelectricity and in-depth studies of device characteristics are needed. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for a novel, superior device. Therefore, in this paper a holistic modeling approaches which lead to a better understanding of ferroelectric memories based on hafnium and zirconium oxide is addressed. Starting from describing the stabilization of the ferroelectric phase within the binary oxides via physical modeling the physical mechanisms of the ferroelectric devices are reviewed. Besides, limitations and modeling of the multi-level operation and switching kinetics of ultimately scaled devices as well as the necessity for Landau-Khalatnikov approach are discussed. Furthermore, a device level model of ferroelectric memory devices that can be used to study the array implementation and their operational schemes are addressed. Finally, a circuit model of the ferroelectric memory device is presented and potential further applications of ferroelectric devices are outlined.

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Section: Circuit Model Of Ferroelectric Devicesmentioning

confidence: 99%

Section: Circuit Model Of Ferroelectric Devicesmentioning

confidence: 99%

A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

et al. 2017

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“…However these models can be used only for the very particular case of a voltage step applied to the ferroelectric capacitor. [3][4][5] A general expression of the switching current as a function of voltage was experimentally found by Drougard 6 for ceramic samples and successfully used to simulate saturated and nonsaturated hysteresis loops. 7,8 However it is very difficult for such an expression to be experimentally determined in thin films due to the very fast switching characterizing these systems.…”

Section: Introductionmentioning

confidence: 99%

Preisach model for the simulation of ferroelectric capacitors

Bartic

Wouters

Maes

et al. 2001

Journal of Applied Physics

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The emerging ferroelectric technology needs a reliable model for the simulation of the ferroelectric capacitors. This model would play a crucial role in designing new ferroelectric nonvolatile memories. As a main requirement, such a model must allow the calculation of the polarization variations for an arbitrary voltage applied to the ferroelectric. However, in spite of the large efforts made in modeling, most of the existing solutions fail to satisfy the above requirement or lack a minimal physical background. To address these problems, we developed a model based on a ferroelectric interpretation of the Preisach theory of hysteresis. In this articles, we try to elucidate how this theory, initially developed for ferromagnetic particles, can be adapted to the ferroelectric materials, despite the many differences between the two. Because the Preisach theory assumes a distribution of the coercitive voltages, we try to clarify its physical meaning in the case of the ferroelectric materials and propose a methodology to determine this distribution experimentally. To facilitate the implementation of the model, the experimental results are then fitted by an analytic function and the whole bidimensional distribution is calculated using a linear approximation. To evaluate the validity of the model, we performed simulations using the Spectre® circuit simulator and the results are in very good agreement with the measurements for the saturated hysteresis loops. The differences existing for the partial loops are mainly due to the linear approximation used for the Preisach distribution. This model can be successfully used for the design of the real memories.

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“…5 Some models 6,7 consist of a set of physicsbased operation equations to be evaluated by means of mathematical software. Other, so-called behavioral models [8][9][10][11] translate experimentally observed ferroelectric switching behavior into an equivalent circuit for device simulation. Here, we present a model that combines a phenomenological equivalent circuit with physics-based operation equations.…”

Section: Introductionmentioning

confidence: 99%

Equivalent-circuit modeling of ferroelectric switching devices

Rep

Prins

1999

Journal of Applied Physics

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A compact equivalent-circuit model for ferroelectric switching devices is derived from a general model for local charge displacements. The general model consists of a matrix of repeat units describing local dissipationless charge displacements ͑electrostatic channel͒, as well as dissipative charge displacements ͑electrochemical channel͒, the channels being coupled due to the electrical charge of the moving species. The derived model for ferroelectric charge displacements is used to simulate both hysteresis and transient characteristics, and applied to two devices: ͑i͒ a ferroelectric capacitor and ͑ii͒ a ferroelectric memory field-effect transistor. The circuits are programmed in SPICE-derived analysis software. We find that experimental hysteresis data obtained on Pb͑Zr,Ti͒O 3 ceramic capacitors and on thin-film transistors with a SnO 2 :Sb semiconductor and a Pb͑Zr,Ti͒O 3 ferroelectric insulator can be reproduced and interpreted with the equivalent-circuit models.

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A circuit model for a thin film ferroelectric memory device

Cited by 13 publications

References 3 publications

A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

Preisach model for the simulation of ferroelectric capacitors

Equivalent-circuit modeling of ferroelectric switching devices

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