A Charge Plasma Based Label Free Biomolecule Detector Using SiGe-Heterojunction Double Gate Tunnel FET

Dewan, Basudha; Chaudhary, Shalini; Yadav, Menka

doi:10.1007/s12633-021-00969-w

Cited by 17 publications

(8 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…is shown in figure 13(b). The extrapolated input voltage known as VIP 3 [42] is the third-order harmonic voltage equals the fundamental voltage and is evaluated as in equation (12). 13) [43].…”

Section: Temperature Dependence Of Linearity Parametersmentioning

confidence: 99%

“…Nevertheless, Si-based doping less TFET faces the same issue of meager I ON as Si-TFET. Hence, numerous approaches have been described in the literature [10][11][12] to further improve the performance of DLTFET. In this regard, the authors had in [13] presented a Si/Ge HJ-DG-DL-TFET, in which I ON is increased by employing a Si/Ge HJ and I ON /I OFF is boosted by employing a high-k dielectric HfO 2 .…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Investigating temperature reliability of RF performance metrics and linearity for double gate doping less TFET

Dewan,

Chaudhary,

Singh

et al. 2024

Eng. Res. Express

View full text Add to dashboard Cite

The Doping Less Tunnel Field Effect Transistor (DL-TFET) is gaining recognition as a promising TFET structure due to its resistance to random dopant fluctuations (RDFs) and the elimination of high thermal budgets and costly annealing techniques. However, temperature sensitivity remains a critical factor in assessing the device’s reliability, as the bandgap of the semiconductor material (Eg) varies with temperature fluctuations. Therefore, this study investigates the impact of temperature changes (ranging from 240 to 360 Kelvin) on thelinearity and RF/analog characteristics of a Heterojunction (HJ), Double Gate (DG), Doping Less (DL) TFET.The analysis encompasses various RF/analog and DC parameters, including ID − VG characteristics, ID − VD characteristics, gm (transconductance), gd (output conductance), fT (cut-off frequency), GBP (Gain Bandwidth Product), TGF (transconductance generation factor), and TFP (transconductance frequency product). These parameters are evaluated using the ATLAS simulation tool, taking into account the influence of temperature fluctuations. Furthermore, the study considers temperature variations when assessing linearity characteristics such as the second-order Voltage Intercept Point (VIP2), third-order Voltage Intercept Point (VIP3), intermodulation distortion (IMD3), and third-order input interception point (IIP3).

show abstract

Section: Temperature Dependence Of Linearity Parametersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Investigating temperature reliability of RF performance metrics and linearity for double gate doping less TFET

Dewan,

Chaudhary,

Singh

et al. 2024

Eng. Res. Express

View full text Add to dashboard Cite

show abstract

“…In light of this, many researchers are looking to develop a new energy‐efficient device sensor that provides low subthreshold swing, low power consumption, high switching current ratio, and low fabrication cost, allowing miniaturization, low noise, label‐free detection, and high sensitivity. Tunnel FET (TFET) biosensor has the potential to surpass the issues and excel as a sensor for the detection of different biomolecules 10–13 . TFET biosensors employ an interband tunneling mechanism as the primary current conduction process, thus overwhelming the limits of traditional FET 14–19 .…”

Section: Introductionmentioning

confidence: 99%

Design and simulation of a germanium source dual‐metal dopingless tunnel FET as a label‐free biosensor

Dash,

Panda

2024

Int J Numerical Modelling

View full text Add to dashboard Cite

This study presents a new dual‐metal dopingless tunnel field effect transistor with a Germanium source (GeS‐DM‐DLT) for label‐free biomolecule detection. Introducing a Ge source and dual‐metal gate provides improved drain current. We have considered an L‐shaped cavity at the top and bottom source metal region for investigating the sensitivity. The biosensor's sensitivity has been measured using the neutral biomolecules' dielectric constants (varying the k‐values in the cavity). The sensor's DC performance is investigated using transfer characteristics, BTBT rate, energy band, and electric field variation for different k‐values. The sensitivity performance of the proposed biosensor is evaluated in terms of different DC parameters (drain current, surface potential, subthreshold swing, interband tunneling rate, electric field) and RF parameters (parasitic capacitance, transconductance, cut‐off frequency, maximum frequency). The suggested biosensor offers a much‐improved SON of 9.86 × 108 and SRATIO of 1.94 × 104 for a dielectric constant of 22.0 at room temperature. Further research has been done to study the effects of dielectric materials, interface trap carriers (ITC), and temperature on drain current, drain current sensitivity, and other sensitivity parameters. The article also includes investigating the influence of the fill factor on sensitivity performance. The GeS‐DM‐DLT sensor performs best in fully‐filled conditions compared to the partially‐filled condition inside the cavity region.

show abstract

“…However, due to the theoretical bound of the SS to 60mV/Decade, and significantly higher power consumption caused by the thermionic emission of carriers researchers have moved their focus to TFET-based biosensors [10][11][12][13]. TFETs have improved results taking into consideration SS and leakage currents because the movement of charge carriers in TFET is governed by band-to-band tunneling (BTBT) mechanism [14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

A label-free dielectric-modulated biosensor using SiGe-heterojunction dual cavity dual metal electrically doped TFET

2023

Self Cite

View full text Add to dashboard Cite

The detection of biomolecules has been accomplished in this article by using the tunnel field effect transistor’s (TFET) bipolar nature. The fabrication procedure has been made simpler, the prices have gone down, and random dopant fluctuation (RDFs) have been eliminated using the charge plasma concept. The objective of this work is to investigate the performance of a DopingLess- Dual Metal Gate- Dual Cavity-HeteroJunction- Tunnel Field Effect Transistor (DL-DMG-DC-HJ-TFET) biosensor that can sense biomolecules inboth the ON and ambipolar states. It is feasible to recognize many types of biomolecules concurrently by taking into account the cavities at both tunneling junctions. The suggested biosensor’s OFF state current has been reduced and its sensitivity has been increased via the use of gate workfunction engineering and bandgap engineering. It has been investigated how the presence of proteins in the cavities affects electrical properties such energy band diagram (EBD), surface potential (SP), subthreshold Swing(SS), threshold voltage (VTH) and current ratio (ION/IOFF). The impact of temperature, germanium mole fraction and position of biomolecules is also analysed in this work. A comparative analysis for drain current sensitivity is presented considering different previous works.

show abstract

A Charge Plasma Based Label Free Biomolecule Detector Using SiGe-Heterojunction Double Gate Tunnel FET

Cited by 17 publications

References 23 publications

Investigating temperature reliability of RF performance metrics and linearity for double gate doping less TFET

Investigating temperature reliability of RF performance metrics and linearity for double gate doping less TFET

Design and simulation of a germanium source dual‐metal dopingless tunnel FET as a label‐free biosensor

A label-free dielectric-modulated biosensor using SiGe-heterojunction dual cavity dual metal electrically doped TFET

Contact Info

Product

Resources

About