A CdTe pixel detector–CMOS preamplifier for room temperature high sensitivity and energy resolution X and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll" id="d1e817" altimg="si7.gif"><mml:mi>γ</mml:mi></mml:math>ray spectroscopic imaging

Sammartini, M.; Gandola, M.; Mele, F.; Garavelli, Bruno; Macera, D.; Pozzi, P.; Bertuccio, G.

doi:10.1016/j.nima.2018.09.025

Cited by 25 publications

(10 citation statements)

References 29 publications

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“…allows the acquisition of an unprecedented highresolution spectrum for CdTe detectors, shown in Fig. 3.2: on the 59.5 keV line the resolution of ∼0.78% recorded using the new SIRIO-6 preamplifier improves by a factor of two the state-of-the-art performance previously reported in literature under similar experimental conditions [7]. The usage of the SIRIO-6 CSA with the described detector array demonstrated the feasibility of high-resolution spectroscopy with CdTe detectors at room temperature and at deep sub-microsecond processing…”

Section: Sirio For Cdte Detectors At Deep Sub-microsecond Signal Processing Timesmentioning

confidence: 54%

Application Specific Integrated Circuits for High Resolution X and Gamma Ray Semiconductor Detectors

Mele

2022

Special Topics in Information Technology

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The increasing demand for performance improvements in radiation detectors, driven by cutting-edge research in nuclear physics, astrophysics and medical imaging, is causing not only a proliferation in the variety of the radiation sensors, but also a growing necessity of tailored solutions for the front-end readout electronics. Within this work, novel solutions for application specific integrated circuits (ASICs) adopted in high-resolution X and $$\upgamma $$ γ ray spectroscopy applications are studied. In the first part of this work, an ultra-low noise charge sensitive amplifier (CSA) is presented, with specific focus on sub-microsecond filtering, addressing the growing interest in high-luminosity experiments. The CSA demonstrated excellent results with Silicon Drift Detectors (SDDs), and with room temperature Cadmium-Telluride (CdTe) detectors, recording a state-of-the-art noise performance. The integration of the CSA within two full-custom radiation detection instruments realized for the ELETTRA (Trieste, Italy) and SESAME (Allan, Jordan) synchrotrons is also presented. In the second part of this work, an ASIC constellation designed for X-Gamma imaging spectrometer (XGIS) onboard of the THESEUS space mission is described. The presented readout ASIC has a highly customized distributed architecture, and integrates a complete on-chip signal filtering, acquisition and digitization with an ultra-low power consumption.

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Section: Sirio For Cdte Detectors At Deep Sub-microsecond Signal Processing Timesmentioning

confidence: 54%

Application Specific Integrated Circuits for High Resolution X and Gamma Ray Semiconductor Detectors

Mele

2022

Special Topics in Information Technology

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“…Generally, RTSDs are represented by X-ray and gamma ray detectors based on high-Z and wide-bandgap compound semiconductors, with the goal to measure high-resolution energy spectra near room-temperature conditions. Currently, thin cadmium telluride (CdTe) and cadmium–zinc–telluride (CdZnTe or CZT) pixel detectors, with thickness up to 3 mm are considered the best choice up to 150 keV [ 7 , 8 ], while thicker detectors (up to 15 mm), based on CZT [ 9 , 10 , 11 , 12 ] and thallium bromide (TlBr) [ 13 ], are very appealing up to 1 MeV. RTSDs with small pixels represent a key choice for energy resolution improvements, which is in agreement with the small pixel effect [ 7 ] and potentially to obtain high spatial resolution.…”

Section: Introductionmentioning

confidence: 99%

Energy Recovery of Multiple Charge Sharing Events in Room Temperature Semiconductor Pixel Detectors

Buttacavoli

Gerardi

Principato

et al. 2021

Sensors

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Multiple coincidence events from charge-sharing and fluorescent cross-talk are typical drawbacks in room-temperature semiconductor pixel detectors. The mitigation of these distortions in the measured energy spectra, using charge-sharing discrimination (CSD) and charge-sharing addition (CSA) techniques, is always a trade-off between counting efficiency and energy resolution. The energy recovery of multiple coincidence events is still challenging due to the presence of charge losses after CSA. In this work, we will present original techniques able to correct charge losses after CSA even when multiple pixels are involved. Sub-millimeter cadmium–zinc–telluride (CdZnTe or CZT) pixel detectors were investigated with both uncollimated radiation sources and collimated synchrotron X rays, at energies below and above the K-shell absorption energy of the CZT material. These activities are in the framework of an international collaboration on the development of energy-resolved photon counting (ERPC) systems for spectroscopic X-ray imaging up to 150 keV.

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“…Cadmium telluride (CdTe) has been widely used as an active layer in different types of devices, such as solar cells and photodetectors, including X‐rays and gamma‐rays, as well as for charged particles and neutrons detectors. [ 13–18 ] Such versatility is mainly due to its desirable electrical properties including high µτ product (2 × 10 −4 cm 2 V −1 ) for polycrystalline CdTe [ 19 ] and band‐gap of 1.44 eV. [ 15 ] This leads to a low intrinsic carrier concentration that allows CdTe‐based systems to operate at room temperature.…”

Section: Introductionmentioning

confidence: 99%

“…Single crystal CdTe has shown remarkable performance in radiation detection applications such as X‐ray imagers, where a CdTe substrate is patterned into a pixelated array of Schottky diodes attached to a CMOS‐based pixelated read‐out IC. [ 16,17,20 ] While this approach has superior spatial resolution compared to scintillator‐based imagers, it is not compatible with low‐cost and true large‐area applications. Other efforts include methods where the active layer, for example, CdTe, is directly deposited on the CMOS‐based read‐out IC.…”

Section: Introductionmentioning

confidence: 99%

Thin‐Film Devices for Active Pixel Sensor Schemes Enabling High Density and Large‐Area Sensors

Ávila-Avendaño

Mejía

Reyes-Banda

et al. 2021

Adv Materials Technologies

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A novel and scalable method enabling the integration of dissimilar thin‐film devices for high density and large‐area sensors is demonstrated. The method is validated by integrating CdS/CdTe P‐N thin‐film diodes with poly‐Si thin‐film transistors (TFTs) in an active pixel sensor (APS) scheme. These devices have been used separately in low‐cost and large‐area applications such as liquid‐crystal displays (Poly‐TFTs) and solar cells (CdS/CdTe) and the methods allow a seamless integration that eliminates the use of discrete pixel‐to‐pixel bumping interconnections. APSs, consisting of a cascode TFT amplifier and a CdS/CdTe diode, are evaluated using pulsed light sources under several wavelengths and intensities. The results demonstrated a responsivity increase of >100× for the integrated sensors and well‐defined signal amplitude, as desirable for energy and intensity monitoring. The method enables the use of two dissimilar and remarkable devices in a wide range of applications such as X‐ray imagers, gamma‐ray detectors, and thermal neutron detectors, while offering large‐area and low‐cost compatibility. More importantly, the integrity and reliability of the diodes and TFTs are not affected by the integration process.

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A CdTe pixel detector–CMOS preamplifier for room temperature high sensitivity and energy resolution X andγray spectroscopic imaging

Cited by 25 publications

References 29 publications

Application Specific Integrated Circuits for High Resolution X and Gamma Ray Semiconductor Detectors

Application Specific Integrated Circuits for High Resolution X and Gamma Ray Semiconductor Detectors

Energy Recovery of Multiple Charge Sharing Events in Room Temperature Semiconductor Pixel Detectors

Thin‐Film Devices for Active Pixel Sensor Schemes Enabling High Density and Large‐Area Sensors

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