A catalytic alloy approach for graphene on epitaxial SiC on silicon wafers

Iacopi, Francesca; Mishra, Neeraj; Cunning, Benjamin V.; Goding, Dayle; Dimitrijev, Sima; Brock, Ryan E.; Dauskardt, Reinhold H.; Wood, Barry; Boeckl, John

doi:10.1557/jmr.2015.3

Cited by 43 publications

(70 citation statements)

References 31 publications

(43 reference statements)

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“…However, the presence of copper changes the graphitization rate. According to the authors' findings, using Ni/Cu alloy is more preferred for graphene growth in comparison to that of Ni alone [153]. It can be explained by the impossibility to provide a homogeneous formation of the nickel silicide over a large SiC surface.…”

Section: Alternative Approaches To Graphene Synthesis On Sicmentioning

confidence: 99%

“…A promising approach related to the segregation technique involves using a Ni/Cu catalytic alloy film on 3C-SiC/Si epitaxial films in order to grow high-quality and highly uniform few-layer graphene [153]. It should be mentioned that the choice of the cubic SiC epitaxial layers on Si substrates is caused by the possibilities to avoid undesirable spontaneous polarization-induced doping of graphene (since the spontaneous polarization is zero in the case of cubic substrate), to lower the fabrication cost (since there is no necessity to use quite expensive bulk SiC substrates for graphitization aims) and to provide a large-area surfaces for graphene growth.…”

Section: Alternative Approaches To Graphene Synthesis On Sicmentioning

confidence: 99%

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Combining graphene with silicon carbide: synthesis and properties – a review

Shtepliuk

Khranovskyy

Yakimova

2016

Semicond. Sci. Technol.

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Being a true two-dimensional crystal, graphene possesses a lot of exotic properties that would enable unique applications. Integration of graphene with inorganic semiconductors, e.g. SiC promotes the birth of a class of hybrid materials which are highly promising for development of novel operations, since they combine the best properties of two counterparts in the frame of one hybrid platform. As a specific heterostructure, graphene on SiC performs strongly dependent on the synthesis method and the growth modes.In this paper a comprehensive review of the most relevant studies of graphene growth methods and mechanisms on SiC substrates has been carried out. The aim is to elucidate the basic physical processes that are responsible for the formation of graphene on SiC.First, an introduction is made covering some intriguing and not so often discussed properties of graphene. Then, we focus on integration of graphene with SiC which is facilitated by the nature of SiC to assume graphitization. As concerning the synthesis methods we discuss thermal decomposition of SiC, chemical vapor deposition and molecular beam epitaxy stressing that the first technique is the most common one when SiC substrates are used. In addition, we briefly appraise graphene synthesis via metal mediated carbon segregation.We address in detail the main aspects of the substrate effect such as substrate face polarity, offcut, kind of polytype and nonpolar surfaces on the growth of graphene layers. A comparison of graphene grown on the polar faces is made. In particular, growth of graphene on Si-face SiC is critically analyzed concerning growth kinetics and growth mechanisms taking into account the specific characteristics of SiC (0001) surfaces, such as the step-terrace structure and the unavoidable surface reconstruction upon heating. In all subtopics obstacles and solutions are featured. We complete the review with a short summary and concluding remarks. Outline

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Section: Alternative Approaches To Graphene Synthesis On Sicmentioning

confidence: 99%

Section: Alternative Approaches To Graphene Synthesis On Sicmentioning

confidence: 99%

Combining graphene with silicon carbide: synthesis and properties – a review

Shtepliuk

Khranovskyy

Yakimova

2016

Semicond. Sci. Technol.

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“…The second point of the author's comment rejects the implications of our conclusions. 2 Epitaxial SiC on Si could be used as a pseudo-substrate for the growth of functional layers such as graphene 5 and III-N materials, 6 for application as broad as electronic graphene devices and LEDs on silicon. Since these materials are generally grown at temperatures greater than 1000 C, we believe it is important to consider the instability we discussed.…”

Section: Dimitriev Questions Our Conclusion That Sic Is Electricallymentioning

confidence: 99%

Response to “Comment on ‘Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures’” [Appl. Phys. Lett. 109, 196101 (2016)]

Pradeepkumar

Mishra

Kermany

et al. 2016

Applied Physics Letters

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“…Interesting properties include for example the binding energetics of atoms or molecules on such systems [10][11][12] , and the energetics of binding 13 of the layer systems themselves. Possible applications include gas separation and storage technologies, 14 and nano-electro-mechanical devices [15][16][17] . The binding energetics of these layer systems typically show a significant contribution from van der Waals (vdW) forces, which renders their description by semilocal density functionals inaccurate.…”

Section: Introductionmentioning

confidence: 99%

Layer response theory: Energetics of layered materials from semianalytic high-level theory

2016

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We present a readily computable semi-analytic "Layer response theory" (LRT) for analysis of cohesive energetics involving two-dimensional layers such as BN or graphene. The theory approximates the Random Phase Approximation (RPA) correlation energy. Its RPA character ensures that the energy has the correct van der Waals asymptotics for well-separated layers, in contrast to simple pairwise atom-atom theories, which fail qualitatively for layers with zero electronic energy gap. At the same time our theory is much less computationally intensive than the full RPA energy. It also gives accurate correlation energies near to the binding minimum, in contrast to Lifshitz-type theory. We apply our LRT theory successfully to graphite and to BN, and to a graphene-BN heterostructure.

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A catalytic alloy approach for graphene on epitaxial SiC on silicon wafers

Abstract: Abstract

Cited by 43 publications

References 31 publications

Combining graphene with silicon carbide: synthesis and properties – a review

Combining graphene with silicon carbide: synthesis and properties – a review

Response to “Comment on ‘Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures’” [Appl. Phys. Lett. 109, 196101 (2016)]

Layer response theory: Energetics of layered materials from semianalytic high-level theory

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