A Case Study to Apprehend RF Susceptibility of Operational Amplifiers

Boyer, Alexandre; Sicard, Étienne

doi:10.1109/emccompo.2019.8919918

Cited by 4 publications

(4 citation statements)

References 7 publications

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“…The conducted susceptibility of this op-amp has been studied in a previous study [14]. The circuit is sensitive to RF voltages coupled on both inverting (V-) and V+ inputs of the op-amp, which may lead to positive or negative offset on the output voltage.…”

Section: B Case Study 2 -Operational Amplifiermentioning

confidence: 99%

On the Correlation Between Near-Field Scan Immunity and Radiated Immunity at Printed Circuit Board Level – Part II

Boyer

Nolhier

Caignet

et al. 2022

IEEE Trans. Electromagn. Compat.

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The work presented in this two-part paper focuses on a prediction method of the radiated susceptibility of integrated circuit and printed circuit board from near-field scan injection, in order to anticipate risks of non-compliance due to design weakness. In Part I, a worst-case estimator of the far-field induced voltage on a PCB trace was proposed. Based on it, an estimator of the radiated susceptibility of a printed-circuit board based on near-field scan results is derived and validated through two validation case studies.

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Section: B Case Study 2 -Operational Amplifiermentioning

confidence: 99%

On the Correlation Between Near-Field Scan Immunity and Radiated Immunity at Printed Circuit Board Level – Part II

Boyer

Nolhier

Caignet

et al. 2022

IEEE Trans. Electromagn. Compat.

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“…In recent years, the ICIM-CI [14] model has been shown to predict chip immunity. The ICIM-CI [15] model is able to approximate and replace accurate chip or circuit simulations by using a look-up table and power distribution network (PDN)-based approach and enables the use of the model in the frequency domain [16].…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, the ICIM-CI [14] mod been shown to predict chip immunity. The ICIM-CI [15] model is able to approximat replace accurate chip or circuit simulations by using a look-up table and power dis tion network (PDN)-based approach and enables the use of the model in the frequ domain [16]. However, the model still needs to depend on time-domain measurements whe taining the IB (input behavior) netlist, which leads to the need for a large number o in broadband multi-frequency applications as well as redundant designs, which m the process cumbersome and time-consuming.…”

Section: Introductionmentioning

confidence: 99%

A Study on the Frequency-Domain Black-Box Modeling Method for the Nonlinear Behavioral Level Conduction Immunity of Integrated Circuits Based on X-Parameter Theory

Chen,

Xie,

Wei

et al. 2024

Micromachines

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During circuit conduction immunity simulation assessments, the existing black-box modeling methods for chips generally involve the use of time-domain-based modeling methods or ICIM-CI binary decision models, which can provide approximate immunity assessments but require a high number of tests to be performed when carrying out broadband immunity assessments, as well as having a long modeling time and demonstrating poor reproducibility and insufficient accuracy in capturing the complex electromagnetic response in the frequency domain. To address these issues, in this paper, we propose a novel frequency-domain broadband model (Sensi-Freq-Model) of IC conduction susceptibility that accurately quantifies the conduction immunity of components in the frequency domain and builds a model of the IC based on the quantized data. The method provides high fitting accuracy in the frequency domain, which significantly improves the accuracy of circuit broadband design. The generated model retains as much information within the frequency-domain broadband as possible and reduces the need to rebuild the model under changing electromagnetic environments, thereby enhancing the portability and repeatability of the model. The ability to reduce the modeling time of the chip greatly improves modeling efficiency and circuit design. The results of this study show that the “Sensi-Freq-Model” reduces the broadband modeling time by about 90% compared to the traditional ICIM-CI method and improves the normalized mean square error (NMSE) by 18.5 dB.

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“…I NTEGRATED circuits (ICs) are essential components in nearly every modern electronic system. A vital factor in the design process of ICs is estimating if their functionality and electromagnetic compatibility (EMC) characteristics can be guaranteed over their entire lifetime [1]. In that context, both electromagnetic (EM) emission and immunity of ICs are critical for reducing interference risks at the system level, where several mitigation techniques to suppress emission [2], [3], [4] and improve immunity [5], [6] of printed circuit boards (PCBs) are reported in the literature.…”

Section: Introductionmentioning

confidence: 99%

Validation of IC Conducted Emission and Immunity Models Including Aging and Thermal Stress

Khan

Koohestani

Levant³

et al. 2023

IEEE Trans. Electromagn. Compat.

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Environmental factors, such as aging and thermal stress, can seriously impact the electromagnetic compatibility behavior of an integrated circuit (IC). The standardized IC emission model for conducted emission (ICEM-CE) and IC immunity model for conducted immunity (ICIM-CI) can be used in industry to predict electromagnetic behavior at the IC and the printed circuit board level. However, these do not take into account the effect of aging and extreme temperature variations. In this article, a custom IC designed in silicon-on-insulator technology, containing several independent analog blocks, is used to characterize the influence of aging and temperature on conducted emission and immunity through measurements and transistor-level simulations. The highly accelerated temperature and humidity stress test (HAST) was performed to evaluate aging and its influence on IC parameters. The results show that the passive distribution network is only influenced by thermal stress and not HAST aging. The latter mainly affects the active elements in the IC and reduces the conducted emission and immunity levels through intrinsic permanent degradation mechanisms. Furthermore, thermal stress mainly causes drifts in the transistor characteristics (such as threshold voltage and effective mobility), which affect the conducted emission and immunity levels and resulting in soft failures. All drifts/tolerances collected from measurements and simulations are characterized in a way that makes it possible to include them in potential future versions of the ICEM-CE and ICIM-CI standards. Index Terms-Highly accelerated temperature and humidity stress test (HAST) aging, integrated circuit (IC), integrated circuit emission model for conducted emission (ICEM-CE), integrated circuit immunity model for conducted immunity (ICIM-CI), thermal stress.

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A Case Study to Apprehend RF Susceptibility of Operational Amplifiers

Cited by 4 publications

References 7 publications

On the Correlation Between Near-Field Scan Immunity and Radiated Immunity at Printed Circuit Board Level – Part II

On the Correlation Between Near-Field Scan Immunity and Radiated Immunity at Printed Circuit Board Level – Part II

A Study on the Frequency-Domain Black-Box Modeling Method for the Nonlinear Behavioral Level Conduction Immunity of Integrated Circuits Based on X-Parameter Theory

Validation of IC Conducted Emission and Immunity Models Including Aging and Thermal Stress

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