A case study of high temperature pass analysis using thermal laser stimulation technique

Lin, Hung Sung; Wu, Mong Sheng

doi:10.1109/irps.2010.5488717

Cited by 2 publications

(1 citation statement)

References 3 publications

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“…At present, several optical based technologies, such as Emission Microscopy (EMMI), Photoelectric Laser Stimulation (PLS), Thermal Laser Stimulation (TLS), and Laser Voltage Probing (LVP), have been proven to meet the present requirements [1]. Among all the advanced technology, TLS is an efficient and non-destructive method used in back-side localization [2][3][4]. TLS technology has proved that it is sensitive to leakage current [5], short-circuit [3], and open-circuit [6].…”

Section: Introductionmentioning

confidence: 99%

Preliminary Study on the Model of Thermal Laser Stimulation for Defect Localization in Integrated Circuits

et al. 2020

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Thermal Laser Stimulation (TLS) is an efficient technology for integrated circuit defect localization in Failure Analysis (FA) laboratories. It contains Optical Beam-Induced Resistance Change (OBIRCH), Thermally-Induced Voltage Alteration (TIVA), and Seebeck Effect Imaging (SEI). These techniques respectively use the principle of laser-induced resistance change and the Seebeck effect. In this paper, a comprehensive model of TLS technology is proposed. Firstly, the model presents an analytical expression of the temperature variation in Integrated Circuits (IC) after laser irradiation, which quantificationally shows the positive correlation with laser power and the negative correlation with scanning velocity. Secondly, the model describes the opposite influence of laser-induced resistance change and the Seebeck effect in the device. Finally, the relationship between the current variation measured in the experiment and other parameters, especially the voltage bias, is well explained by the model. The comprehensive model provides theoretical guidance for the efficient and accurate defect localization of TLS technology.

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