A C-switch cell for low-voltage and high-density SRAMs

Kuriyama, H.; Ishigaki, Y.; Fujii, Yoshihisa; Maegawa, Satoru; Maeda, S.; Miyamoto, S.; Tsutsumi, K.; Miyoshi, Hirokazu; Yasuoka, Akihiko

doi:10.1109/16.735725

Cited by 27 publications

(9 citation statements)

References 11 publications

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“…Over the past three decades, polycrystalline silicon ͑poly-Si͒ has played an increasingly important role in a broad range of semiconductor-related technologies. 1 For example, it is widely used in integrated circuits such as dynamic and static random-access memories, [1][2][3][4] in microelectromechanical systems, 5 in solar cells, 6 and in large-area electronic systems such as flat-panel active-matrix displays. 1,7 The tremendous interest in poly-Si has been due, in part, to the fact that this material exhibits high carrier mobilities ͑on the order of 100 cm 2 / V s for both electrons and holes͒, 8 and lends itself toward inexpensive and largearea deposition.…”

Section: Introductionmentioning

confidence: 99%

Effects of x-ray irradiation on polycrystalline silicon, thin-film transistors

Antonuk

El‐Mohri

et al. 2006

Journal of Applied Physics

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The effects of x-ray irradiation on the transfer and noise characteristics of excimer-laser-annealed polycrystalline silicon ͑poly-Si͒ thin-film transistors ͑TFTs͒ have been examined at dose levels up to 1000 Gy. Parameters including mobility, threshold voltage, subthreshold swing, and leakage current, as well as flicker and thermal noise coefficients, were determined as a function of dose. In addition, the physical mechanisms of the observed changes in these parameters are analyzed in terms of radiation-generated charge in the gate oxide, at the Si-SiO 2 interface, and at the grain boundaries. The results of the studies indicate that poly-Si TFTs exhibit sufficient radiation tolerance for the use in active-matrix flat-panel imagers for most medical x-ray applications.

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Section: Introductionmentioning

confidence: 99%

Effects of x-ray irradiation on polycrystalline silicon, thin-film transistors

Antonuk

El‐Mohri

et al. 2006

Journal of Applied Physics

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“…A great deal of research is progressing on the application of the polycrystalline silicon (poly-Si) thin-film transistor (TFT) to ultrafine active-matrix liquid crystal panel displays, system-on-panels, static random access memory (SRAM) memory cells [1], and intelligent power chips [2]. Although poly-Si TFT has poorer performance than bulk metal-oxide-semiconductor field-effect-transistor (MOSFET), the major cause of this performance drop is the presence of grain boundaries.…”

Section: Introductionmentioning

confidence: 99%

Grain positioning using metal imprint technology for single‐grain Si thin‐film transistor

Makihira

Yoshii

Asano

2003

Electron Comm Jpn Pt II

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SUMMARYWe prepared a large-grain silicon thin film by a new solid-phase crystallization technology called metal imprint technology, fabricated a prototype of a quasi-single-crystal silicon (Si) thin-film transistor (TFT), and evaluated its performance. Metal imprint technology presses a chip array coated by metal onto amorphous silicon and promotes the nucleation in solid-phase crystallization by the metal transferred to a small area. By using nickel (Ni) in the imprinting, we found that the incubation time could be significantly decreased, and large grains could be formed at any desired positions. The grains we obtained had a <111> orientation. An average 7-µm grain size was obtained by annealing at 560 °C. This technology was used to fabricate TFT that positioned the channel region in a single grain. The fabricated TFT exhibited excellent performance in the field effect mobilities of 400 cm 2 /Vs in the n-channel and 220 cm 2 /Vs in the p-channel. We found that dispersion in mobility of TFTs could be reduced to one-half of the dispersion of polycrystalline-Si TFT that was crystallized in the conventional solid phase. Threshold voltages had excellent uniformity and were about one-half of those of a conventional solid-phase crystallized TFT.

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“…Polycrystalline silicon (poly-Si) thin-film transistors (TFTs) are attracting much attention as components to realize active-matrix flatpanel displays with signal processing circuits (so-called system-on-panel circuits), thin-film complementary metal-oxide-semiconductor (CMOS) integrated circuits, static random-access memory (SRAM) cells 1) and intelligent power chips. 2) Metal-induced crystallization (MIC) of amorphous Si (a-Si) is an attractive method of preparing poly-Si at a low temperature because it can grow highly oriented crystal grains due to the preferential crystal orientation of the metal-silicon alloy.…”

Section: Introductionmentioning

confidence: 99%

Inkjet-Printed Metal-Colloid-Induced Crystallization of Amorphous Silicon

Ishida

Nakagawa

Asano

2007

jjap

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We demonstrate for the first time the crystallization of amorphous Si induced by Ni colloid printing using inkjet printing technology. An electrostatic inkjet nozzle having a needle inside a capillary was built in house, which was able to eject very fine droplets according to the applied electric voltage. Dots of Ni colloidal solution were formed in the prescribed position. Enhanced crystallization was observed at the Ni-colloid-printed sites. The probability of crystallization decreased with the Ni concentration in the solution. At and above 4 mass % Ni concentration, fully enhanced crystallization occurred. Furthermore, the orientation of crystallized Si grains was determined by electron-backscattering pattern (EBSP) analysis. The dependence of crystallization behavior on the Ni concentration was also investigated.

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A C-switch cell for low-voltage and high-density SRAMs

Cited by 27 publications

References 11 publications

Effects of x-ray irradiation on polycrystalline silicon, thin-film transistors

Effects of x-ray irradiation on polycrystalline silicon, thin-film transistors

Grain positioning using metal imprint technology for single‐grain Si thin‐film transistor

Inkjet-Printed Metal-Colloid-Induced Crystallization of Amorphous Silicon

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