A broadband Ti:LiNbO/sub 3/ optical modulator with a ridge structure

Noguchi, K.; Mitomi, O.; Miyazawa, H.; Seki, S.

doi:10.1109/50.390234

Cited by 121 publications

(39 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…For the left one, is replaced by with being the waveguide separation. According to [7], [17], and [18], the operating wavelength is assumed to be m, and , , , , the quasi-TM optical mode propagation is chosen.…”

Section: Numerical Resultsmentioning

confidence: 99%

“…In this approach, on the other hand, to produce a two-step analysis of electrooptic modulation of optical waveguides, the fullwave and quasi-TEM FEM microwave solvers are linked to the scalar FEM optical waveguide solver and, therefore, more precise evaluation of the half-wavelength voltage using the optical effective index changes due to the microwave electric field in an optical waveguide is possible. Using these FEM solvers, the behavior of an ultrabroad-band TW LiNbO Mach-Zehnder optical modulator with a ridge structure [7], [8] is investigated, and the necessity of using the full-wave FEM solver is verified by comparing the numerical results with the experimental data [7], [8].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Finite-element modeling of broad-band traveling-wave optical modulators

Koshiba

Tsuji

Nishio

1999

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

Abstract-A full-wave finite-element method with hybrid edge/ nodal elements is, for the first time, applied to investigating the frequency dispersion of microwave propagation characteristics of broad-band traveling-wave (TW) optical modulators using planar electrode configurations. In order to produce a two-step analysis of electrooptic modulation of optical waveguides, the microwave electrode solver is linked to the optical waveguide solver. Numerical results are shown for an ultrabroad-band TW LiNbO 3 Mach-Zehnder optical modulator with a ridge structure, and the necessity of using the full-wave solver is verified by comparing the calculated 3-dB bandwidth and half-wavelength voltage with the experimental data.Index Terms-Coplanar waveguide, finite-element method, fullwave analysis, microwave photonic device, traveling-wave optical modulator.

show abstract

Section: Numerical Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Finite-element modeling of broad-band traveling-wave optical modulators

Koshiba

Tsuji

Nishio

1999

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

show abstract

“…Ion beam milling [164,165], plasma etching [166,167], and wet etching [168][169][170][171] are the main techniques pursued. Wet etching in particular has produced fairly low-loss waveguides [171].…”

Section: Second-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

Emerging heterogeneous integrated photonic platforms on silicon

Fathpour

2015

Nanophotonics

View full text Add to dashboard Cite

Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the freecarrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III-V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with the common feature of integrating them on a single substrate, most notably silicon.

show abstract

“…An etched ridge waveguide in an optical modulator controls the velocity mismatch between the optical wave and the modulating signal and concentrates the electric field on the waveguide, resulting in a large modulation bandwidth and a low driving voltage [1]. Also, the photonic crystal structure etched on the LN substrate produces the novel characteristics of a wavelength conversion or a spatial switch [2].…”

Section: Introductionmentioning

confidence: 99%