A Broadband LNA With Multiple Bandwidth Enhancement Techniques

Li, Jiaxuan; Yuan, Yang; Zeng, Jialong; He, Ding; Yu, Zhongjun

doi:10.1109/lmwt.2023.3234158

Cited by 4 publications

(2 citation statements)

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“…1 As a result, research on BW scaling techniques has been very competitive in recent years. 2 At the same time, the high demand for low power consumption and low cost in most transmitting systems, such as electronic warfare, wireless communication, and radar systems, makes power amplifier (PA) designs with wide BW, high efficiency, and low cost more attractive. As a result, broadband PAs have received much attention as the main contributor to the power budget in the system.…”

Section: Introductionmentioning

confidence: 99%

“…With the development of modern radar systems has led to an increasing demand for multimode communications and the operating bandwidth (BW) of radar systems is expected to exceed one octave 1 . As a result, research on BW scaling techniques has been very competitive in recent years 2 . At the same time, the high demand for low power consumption and low cost in most transmitting systems, such as electronic warfare, wireless communication, and radar systems, makes power amplifier (PA) designs with wide BW, high efficiency, and low cost more attractive.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Analysis and design of broadband 2‐W power amplifier based on cascode transistors

Li,

Yuan,

Yuan

et al. 2024

Micro & Optical Tech Letters

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In this article, a 7–11.5 GHz 2‐W power amplifier (PA) based on cascode transistors is developed using 0.15‐µm GaAs pHEMT. This design facilitates impedance matching in the broadband range by using a cascode structure. A double‐cascode transistors structure is used as a unit cell to combine radio frequency voltage swings to achieve a broad bandwidth (BW). In addition, power synthesis techniques are used to achieve higher power output. Ultimately, based on the above two structures, a four‐way power‐synthesized PA is designed. The fabricated PA shows a peak power of 33.8 dBm at 9 GHz with a power‐added efficiency (PAE) of 43%. The output power is higher than 32 dBm at frequencies from 6 to 11.5 GHz with a PAE of more than 25%. The fractional 3‐dB output power BW is 80%. The chip area is 3.6 × 1.8 mm2, including the input and output test pads.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%