A broadband 3D microtubular photodetector based on a single wall carbon nanotube–graphene heterojunction

Abstract

In this paper, a three-dimensional (3D) photodetector based on single wall carbon nanotubes (SWCNTs) and graphene heterojunction has been fabricated by a self-rolled-up process. In the designed structure, the graphene...

External condition-induced interfacial charge transfer in single-walled carbon nanotube/graphene van der Waals heterostructures

“…However, the holes are trapped in the SWCNTs because of potential barrier at the heterostructure interface. 13,24 Moreover, the heterostructures promote the transfer of some of the electrons injected by NO 2 molecules from the SWCNTs to graphene owing to the presence of a built-in electric field. 36 However, the NO 2 molecules extract a large number of electrons from graphene, significantly exceeding the number extracted from the SWCNTs, resulting in a significant increase in the number of holes in graphene.…”

“…6 When SWCNTs and graphene are assembled into all-carbon van der Waals (vdW) heterostructures, they exhibit more fascinating properties compared to their monolithic counterparts, owing to the identical sp 2 hybridization of carbon atoms, wellmatched lattice, and strong interfacial coupling. 2,7 SWCNT/graphene vdW heterostructures have been successfully utilized for fabricating novel photodetectors, humidity sensors, and flexible electronics, [8][9][10][11][12][13][14] and are expected to achieve even more in the fields of nanoelectronics and nano-optoelectronics. SWCNT/graphene vdW heterostructure nanodevices primarily rely on electronic interactions between materials.…”

PbTe Nanowires Electrochemically Deposited on Si Substrates as PbTe/Si Heterojunction Infrared Photodetectors

“…Infrared photodetectors have been widely used in military and civilian fields, such as infrared imaging, precision guidance, medical safety, aerospace, etc. The leapfrog development from traditional infrared photodetectors such as HgCdTe, InSb, graphene and PbS QDs infrared photodetectors are almost entirely driven by the application of new materials and continuous progress in device fabrication. − However, in the process of key material preparation and core device fabrication, issues such as complex material processing, low yield of devices, and high manufacturing difficulty have emerged. Therefore, the technology of key infrared photodetection materials and devices needs to be accelerated iteratively to meet the application requirements of future infrared detectors, such as miniaturization, integration, and low cost.…”

High-Performance Broadband Photodetectors Based on Asymmetric All-Carbon Nano-Heterostructures

“…As carbon allotrope materials, graphene and C 60 are widely used in SWCNT-based photodetectors due to their similar structures with SWCNTs and strong interface coupling at an atomic level. − Previous reports indicate that graphene and C 60 can dramatically enhance the charge separation efficiency and suppress the recombination probability of excitons by constructing all-carbon nano-heterostructures with SWCNTs. , Liu et al investigated a high-performance broadband all-carbon heterojunction photodetector using graphene and SWCNTs. The device exhibits a high photoresponsivity of >100 A W –1 and a fast response time of ∼100 μs under visible–NIR (400–1550 nm) light illumination.…”