A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications

Bücher, Thomas; Grzyb, Janusz; Hillger, Philipp; Rücker, H.; Heinemann, B.; Pfeiffer, Ullrich R.

doi:10.1109/jssc.2022.3162079

Cited by 20 publications

(3 citation statements)

References 40 publications

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“…In addition to the higher pathloss (PL) at mmWave frequencies, PAs at such bands typically have lower output powers and single digit efficiencies. In addition to the PA design methods for THz/sub-THz which also work for mmWave bands, a high efficiency class-E PA based on Texas Instruments BiCMOS Silicon Germanium technology was designed in [74], [75]. In [76], the authors developed a three-way Doherty PA prototype.…”

Section: B Transceiver Designs 1) Thz Transceiver Designmentioning

confidence: 99%

Multi-Band Wireless Communication Networks: Fundamentals, Challenges, and Resource Allocation

Aboagye,

Amin Saeidi,

Tabassum

et al. 2024

IEEE Trans. Commun.

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The sub-6 GHz spectrum and the millimeter wave frequency band, with its huge spectrum, have been exploited in the past years to meet the traffic demands of wireless communication networks. However, the limited and licensed spectrum of these bands cannot support the massive connectivity requirements, the exponential growth of data traffic, and the strict quality-of-service requirements for 6G and beyond wireless systems. Extremely high frequencies, such as optical and terahertz, which offer much wider transmission bandwidths with extreme data rate capabilities, are expected to play key roles in the 6G and beyond era. As a result, futuregeneration wireless networks will transition from single-band and heterogeneous networks to multi-band networks (MBNs), where various frequency bands coexist. Despite the great potential of MBNs, they face novel challenges from channel modeling, transceiver and antenna design, programmable simulation platforms, standardization activities, and resource allocation. This paper provides a tutorial overview from the communication design perspective of the various frequency bands, elaborating on the above issues. Then, we introduce and examine typical MBN architectures for future networks and provide a detailed overview of state-of-the-art resource allocation problems for existing MBNs that typically operate on two frequency bands. The considered resource allocation optimization problems and solution techniques are discussed comprehensively. We then identify key performance metrics and constraint sets that should be considered for resource allocation optimization in future MBNs and provide numerical results to depict how various system parameters and user behaviors can influence their performance. Finally, we present several potential research issues as future work for the design and performance optimization of MBNs.

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Section: B Transceiver Designs 1) Thz Transceiver Designmentioning

confidence: 99%

Multi-Band Wireless Communication Networks: Fundamentals, Challenges, and Resource Allocation

Aboagye,

Amin Saeidi,

Tabassum

et al. 2024

IEEE Trans. Commun.

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“…This work is an optimal candidate for a future Terahertz frequency-comb radar [18] with sub-millimeter range resolution. The recent demonstration [41] of a power amplifier with more than 6 dBm of output power at 0.3 THz in a SiGe BiCMOS technology with f T /f max of 470/650 GHz will further increase the operating frequency of THz silicon-integrated FMCW transceivers using the proposed topology.…”

Section: B Fmcw Radar Measurementmentioning

confidence: 99%

A 1.42-mm² 0.45–0.49 THz Monostatic FMCW Radar Transceiver in 90-nm SiGe BiCMOS

Mangiavillano

Kaineder

Aufinger

et al. 2022

IEEE Trans. THz Sci. Technol.

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Terahertz frequency-modulated continuous-wave (FMCW) radars operating close to and beyond fmax often use gain-enhancing lenses to improve the signal-to-noise ratio. A compact single-chip transceiver benefits a lot from the alignment of the lens to the single on-chip antenna in a monostatic system. The typically required coupler for monostatic operation adds an insertion loss. The proposed multiply-by-24 frequency multiplier-based FMCW radar transceiver removes the coupler and integrates both the final 0.48-THz doubler and subharmonic downconverter into a single common collector push-push doubler. The common emitter is the only port at 0.48 THz in this monostatic system, feeding the top-metal on-chip patch antenna using a direct via stack. The 1.42-mm 2 monostatic FMCW radar transceiver, manufactured in a 90-nm SiGe BiCMOS technology with an fT/fmax of 300/480 GHz consumes 85 mA when connected to a 3.3-V supply. At 0.48 THz, the output power is −12 dBm and the single-sideband noise figure is measured as 36.3 dB. FMCW radar measurements with operating bandwidths of up to 55 GHz, corresponding to a theoretical range resolution of 2.73 mm are performed using an on-board frequency source of a credit card-sized demonstrator.

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“…C MOS and SiGe bipolar CMOS (BiCMOS) technologies can offer high integration levels for low-cost massmarket applications [1]. Current BiCMOS research offers f max at around 650 GHz [2] with typical BiCMOS production technologies having an f max of 450-480 GHz [3], [4] and CMOS research offering f max of 450 GHz [5]. Using silicon-integrated technologies at terahertz (THz) frequencies therefore becomes challenging due to the absence of practical transistor gain above f max /2, currently only demonstrated at 1 THz using a III-V InP high electron mobility transistor with f max of 1.5 THz [6].…”

Section: Introductionmentioning

confidence: 99%

A Terahertz Monostatic Transceiver in 90-nm SiGe BiCMOS

Mangiavillano,

Kaineder,

Aufinger

et al. 2024

IEEE Trans. THz Sci. Technol.

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A combined common collector harmonic mixer and frequency multiplier is designed to operate at the fourth harmonic in a transceiver at around 0.88 THz in a 90-nm SiGe BiCMOS technology with an f T / f max of 300/480 GHz. The transceiver occupies a chip area of 1.35 mm 2 with a current consumption of 144 mA when connected to a 3.3-V supply. Measurements reveal an effective isotropic radiated power of −30 dBm at 0.888 THz and a system receiver conversion gain of −4 dB as well as a single-sideband noise figure of 57 dB at 0.912 THz.

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A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications

Cited by 20 publications

References 40 publications

Multi-Band Wireless Communication Networks: Fundamentals, Challenges, and Resource Allocation

Multi-Band Wireless Communication Networks: Fundamentals, Challenges, and Resource Allocation

A 1.42-mm² 0.45–0.49 THz Monostatic FMCW Radar Transceiver in 90-nm SiGe BiCMOS

A Terahertz Monostatic Transceiver in 90-nm SiGe BiCMOS

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A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications

Cited by 20 publications

References 40 publications

Multi-Band Wireless Communication Networks: Fundamentals, Challenges, and Resource Allocation

Multi-Band Wireless Communication Networks: Fundamentals, Challenges, and Resource Allocation

A 1.42-mm2 0.45–0.49 THz Monostatic FMCW Radar Transceiver in 90-nm SiGe BiCMOS

A Terahertz Monostatic Transceiver in 90-nm SiGe BiCMOS

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Product

Resources

About

A 1.42-mm² 0.45–0.49 THz Monostatic FMCW Radar Transceiver in 90-nm SiGe BiCMOS