2022
DOI: 10.1007/s42341-022-00398-5
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A Brief Review on III-V/Si Tandem Solar Cells

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Cited by 6 publications
(9 citation statements)
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“…So, the main challenge for III-V/Si tandem SCs is the optimization of the integration method because of cost while maintaining the desired efficiency. [133] As mentioned before,…”
Section: Challengesmentioning
confidence: 75%
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“…So, the main challenge for III-V/Si tandem SCs is the optimization of the integration method because of cost while maintaining the desired efficiency. [133] As mentioned before,…”
Section: Challengesmentioning
confidence: 75%
“…Si as a bottom cell for GaAs/InGaP is more feasible than Ge, both in terms of current matching and bandgap matching (Ge = .67 eV, Si = 1.2 eV) along with better thermal conductivity and mechanical strength. [133,134] In addition, Si as a bottom cell offers more reliability and enables low manufacturing costs with extended spectral absorption. [24] 3.1.…”
Section: Solutionsmentioning
confidence: 99%
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“…On the other hand, formation of defects during compound growth along with problems related to reliability and reproducibility has hindered Si into competing with other tandem cell technologies rather than being the outright best candidate as in single-junction solar cells. However, processes such as heteroepitaxial growth, mechanical stacking and wafer bonding ensures that III-V//Si produces the best performance at competitive costs (Yu, Rabelo and Yi, 2022). In 2021, the 35.9% efficiency was achieved for 3-J III-V absorbers with Si when measured under terrestrial AM 1.5G spectrum.…”
Section: Combining Photovoltaic Technologiesmentioning
confidence: 99%