A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performance

Khodabakhsh, Amir; Fallahnejad, Mohammad; Vadizadeh, Mahdi

doi:10.1016/j.microrel.2023.115278

Microelectronics Reliability

2024

DOI: 10.1016/j.microrel.2023.115278

|View full text |Cite

A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performance

Amir Khodabakhsh,

Mohammad Fallahnejad,

Mahdi Vadizadeh

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article2

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

A Multi‐Directional GaN/TiO₂ Cuboidal Nanowire Junctionless FET‐Based Ultra‐High Pressure Sensor: A Design Perspective

Khodabakhsh,

Amini,

Fallahnejad

2024

Advcd Theory and Sims

View full text Add to dashboard Cite

In this work, a nanoelectromechanical system (NEMS) field‐effect transistor (FET)‐based ultra‐high pressure (PR) multi‐directional sensor utilizing a junctionless profile and gate‐all‐around geometry is proposed with the advanced materials GaN/TiO2, named MD‐JLFET PR sensor. A design guide approach is considered, and accurate analysis is conducted starting from the bending of cantilevers based on materials' Young's moduli due to applied pressure and finally extracting the dynamic range of the proposed PR sensor. For the first time, the direction and magnitude of pressure can be measured using gate‐source capacitances (CGS). By employing oxide engineering and fringing field, the sensor achieves distinguishable states compared to previous works. Simulation results demonstrate that the PR sensor can measure pressures ranging from 10 to 30 MPa with high sensitivity in terms of CGS, IOFF, ION, and ION/IOFF. Therefore, the proposed FET‐based PR sensor holds promise for widespread industrial applications requiring ultra‐high pressure range measurement, directional pressure sensing, and high sensitivity.

show abstract

A Multi‐Directional GaN/TiO₂ Cuboidal Nanowire Junctionless FET‐Based Ultra‐High Pressure Sensor: A Design Perspective

Khodabakhsh,

Amini,

Fallahnejad

2024

Advcd Theory and Sims

View full text Add to dashboard Cite

show abstract

Reliability Analysis for a GaAs LNA with Temperature Stress

Lin,

Wang

2024

J Electron Test

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performance

Cited by 2 publications

References 34 publications

A Multi‐Directional GaN/TiO₂ Cuboidal Nanowire Junctionless FET‐Based Ultra‐High Pressure Sensor: A Design Perspective

A Multi‐Directional GaN/TiO₂ Cuboidal Nanowire Junctionless FET‐Based Ultra‐High Pressure Sensor: A Design Perspective

Reliability Analysis for a GaAs LNA with Temperature Stress

Contact Info

Product

Resources

About

A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performance

Cited by 2 publications

References 34 publications

A Multi‐Directional GaN/TiO2 Cuboidal Nanowire Junctionless FET‐Based Ultra‐High Pressure Sensor: A Design Perspective

A Multi‐Directional GaN/TiO2 Cuboidal Nanowire Junctionless FET‐Based Ultra‐High Pressure Sensor: A Design Perspective

Reliability Analysis for a GaAs LNA with Temperature Stress

Contact Info

Product

Resources

About

A Multi‐Directional GaN/TiO₂ Cuboidal Nanowire Junctionless FET‐Based Ultra‐High Pressure Sensor: A Design Perspective

A Multi‐Directional GaN/TiO₂ Cuboidal Nanowire Junctionless FET‐Based Ultra‐High Pressure Sensor: A Design Perspective