A Boundary Condition-Based Approach to the Modeling of Memristor Nanostructures

Corinto, Fernando; Ascoli, Alon

doi:10.1109/tcsi.2012.2190563

Cited by 146 publications

(178 citation statements)

References 19 publications

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“…To do so, we considered the non-linear dopant kinetics which are dominant at the boundaries of resistive switching in the Verilog-A model [20,21]. Before we developed the memristor Verilog-A model, we should consider memristive behavior first.…”

Section: Simulation Resultsmentioning

confidence: 99%

Dynamic Reference Scheme with Improved Read Voltage Margin for Compensating Cell-position and Background-pattern Dependencies in Pure Memristor Array

Shin¹,

Byeon²,

Song³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In this paper, a new dynamic reference scheme is proposed to improve the read voltage margin better than the previous static reference scheme. The proposed dynamic reference scheme can be helpful in compensating not only the background pattern dependence but also the cell position dependence. The proposed dynamic reference is verified by simulating the CMOS-memristor hybrid circuit using the practical CMOS SPICE and memristor Verilog-A models. In the simulation, the percentage read voltage margin is compared between the previous static reference scheme and the new dynamic reference scheme. Assuming that the critical percentage of read voltage margin is 5%, the memristor array size with the dynamic scheme can be larger by 60%, compared to the array size with the static one. In addition, for the array size of 64 x 64, the interconnect resistance in the array with the dynamic scheme can be increased by 30% than the static reference one. For the array size of 128 x 128, the interconnect resistance with the proposed scheme can be improved by 38% than the previous static one, allowing more margin on the variation of interconnect resistance.Index Terms-Dynamic reference scheme, read voltage margin, cell-position and background-pattern dependencies, pure memristor array

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Section: Simulation Resultsmentioning

confidence: 99%

Dynamic Reference Scheme with Improved Read Voltage Margin for Compensating Cell-position and Background-pattern Dependencies in Pure Memristor Array

Shin¹,

Byeon²,

Song³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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show abstract

“…By multiplying the window function f(x), w will drift nonlinearly when w is approaching either boundary of 0 or D. In order to model different and more sophisticated memristor dynamics, several models were proposed in the literature based on the HP memristor with different window functions such as Joglekar's model [16], Biolek's model [1], the boundary condition memristor (BCM) model [13] and the threshold adaptive memristor (TEAM) model [18]. However, the window function used by HP is investigated in this paper.…”

Section: The Hp Memristor Modelmentioning

confidence: 99%

Investigations of the staircase memristor model and applications of memristor-based local connections

Yang

Chen

Wang

2016

Analog Integr Circ Sig Process

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The memristor is postulated by Chua (IEEE Trans Circuit Theory, 18(5): [507][508][509][510][511][512][513][514][515][516][517][518][519] 1971) as the fourth fundamental passive circuit element and experimentally validated by HP labs in 2008. It is an emerging device in nano technology that provides low power consumption as well as high density. In this paper, the staircase memristor model is discussed and investigated with the HP memristor model. By connecting HP memristor models in series or parallel, a staircase memristor model could be constructed and demonstrate staircase behavior. By comparing the staircase memristor model to the general HP memristor model, distinctions between them are demonstrated and this lends themselves to different applications. Further to the memristor-based cellular neural network (CNN), the structure is modified and applied to the echo state network (ESN) where memristors are used as local connections. By this means, the ESN benefits from the simple structure, non-volatility and low power feature of memristors and therefore the complexity and size of the original ESN architecture can be reduced. Meanwhile, the simpler structure still has satisfactory performance in applications compared with the original ESN.

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“…The BCM [4] model was introduce to provide more accuracy, utilizing a parametric window function. This model is based on a window function having unitary value for all values of x(t) ∈ (0, 1), and exhibiting vertical transitions for certain cases.…”

Section: Window Function Modelsmentioning

confidence: 99%

“…Models based on nonlinear dopant drift assumptions (e.g. [4]- [9]). A window function is added to impose a changing drift velocity and resolve the boundary conditions.…”

Section: Introductionmentioning

confidence: 99%

Memristor model based on fuzzy window function

Abdel-Kader

Abuelenin

2015

2015 IEEE International Conference on Fuzzy Systems (FUZZ-IEEE)

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Abstract-Memristor (memory-resistor) is the fourth passive circuit element. We introduce a memristor model based on a fuzzy logic window function. Fuzzy models are flexible, which enables the capture of the pinched hysteresis behavior of the memristor. The introduced fuzzy model avoids common problems associated with window-function based memristor models, such as the terminal state problem, and the symmetry issues. The model captures the memristor behavior with a simple rule-base which gives an insight of how memristors work. Because of the flexibility offered by the fuzzy system, shape and distribution of input and output membership functions can be tuned to capture the behavior of various real memristors.

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A Boundary Condition-Based Approach to the Modeling of Memristor Nanostructures

Cited by 146 publications

References 19 publications

Dynamic Reference Scheme with Improved Read Voltage Margin for Compensating Cell-position and Background-pattern Dependencies in Pure Memristor Array

Dynamic Reference Scheme with Improved Read Voltage Margin for Compensating Cell-position and Background-pattern Dependencies in Pure Memristor Array

Investigations of the staircase memristor model and applications of memristor-based local connections

Memristor model based on fuzzy window function

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