A Bifunctional Carbazide Additive For Durable CsSnI₃ Perovskite Solar Cells

Abstract

Inorganic CsSnI 3 with low toxicity and a narrow bandgap is a promising photovoltaic material. However, the performance of CsSnI 3 perovskite solar cells (PSCs) is much lower than that of Pb-based and hybrid Sn-based (e.g., CsPbX 3 and CH(NH 2 ) 2 SnX 3 ) PSCs, which may be attributed to its poor film-forming property and the deep traps induced by Sn 4+ . Here, a bifunctional additive carbazide (CBZ) is adapted to deposit a pinhole-free film and remove the deep traps via two-step annealing. The lone electrons of the -NH 2 and -CO units in CBZ can coordinate with Sn 2+ to form a dense film with large grains during the phase transition at 80 °C. The decomposition of CBZ can reduce Sn 4+ to Sn 2+ during annealing at 150 °C to remove the deep traps. Compared with the control device (4.12%), the maximum efficiency of the CsSnI 3 :CBZ PSC reaches 11.21%, which is the highest efficiency of CsSnI 3 PSC reported to date. A certified efficiency of 10.90% is obtained by an independent photovoltaic testing laboratory. In addition, the unsealed CsSnI 3 :CBZ devices maintain initial efficiencies of ≈100%, 90%, and 80% under an inert atmosphere (60 days), standard maximum power point tracking (650 h at 65 °C), and ambient air (100 h), respectively.

Atomic Layer Deposition and Pulsed Chemical Vapor Deposition of SnI2 and CsSnI3

“…A CsSnI 3 film made by the pulsed CVD conversion has a rougher surface ( R q = 35 nm, relative roughness 19%) compared to a film made by the ALD conversion ( R q = 16 nm, relative roughness 9%). These values are in line with previously reported surface roughnesses of CsSnI 3 films made by spin coating. , …”

Oxidation-enabled SnS conversion to two-dimensional porous SnO2 flakes towards NO2 gas sensing

“…, SnS, SnSe and CsSnI 3 ) are easily oxidized to Sn( iv ) species. 29,30,33–35 Furthermore, it is worth noting that the width/strength of the diffraction peaks of SnO 2 gradually narrows/ascends at elevated temperatures (600–1000 °C, Fig. 1c–e), suggesting an increase in the crystallite size and crystallinity of SnO 2 .…”

Achieving 17.46% Efficiency CsPbI2Br Perovskite Solar Cells via Multifunction Lead Chloride‐Modified ZnO Electron Transporting Layer

“…The next stage of the curve is a trap-filled limit region (V TFL ), which represents the filling process of the trap states. The value of N t was calculated by the onset voltage of V TFL according to the equation [52] :…”