A BiCMOS W-Band 2×2 Focal-Plane Array With On-Chip Antenna

Abstract

This paper presents a W-band 2 2 focal-plane array (FPA) for passive millimeter-wave imaging in a standard 0.18 m SiGe BiCMOS process ( GHz). The FPA incorporates four Dicke-type receivers representing four imaging pixels. Each receiver employs the direct-conversion architecture consisting of an on-chip slot folded dipole antenna, an SPDT switch, a low noise amplifier, a single-balanced mixer, an injection-locked frequency tripler (ILFT), an IF variable gain amplifier, a power detector, an active bandpass filter and a synchronous demodulator. The LO signal is generated by a shared Ka-band PLL and distributed symmetrically to four local ILFTs. The measured LO phase noise is at 1 MHz offset from the 96 GHz carrier. This imaging receiver (without antenna) achieves a measured average responsivity and noise equivalent power of 285 MV/W and 8.1 , respectively, across the 86-106 GHz bandwidth, which results a calculated NETD of 0.48 K with a 30 ms integration time. The system NETD increases to 3 K with on-chip antenna due to its low efficiency at W-band. MMW images have been generated in transmission mode. This work demonstrates the highest integration level of any silicon-based systems in the 94 GHz imaging band.

122 GHz single-chip dual-channel SMD radar sensor with on-chip antennas for distance and angle measurements

“…The second drawback of implementing antenna in siliconbased technologies is its high-dielectric constant (1 r ≈ 11.7), causing most of the power to be confined in the substrate instead of being radiated into free space, further degrading the radiation efficiency. To counteract this behavior, a number of techniques have been deployed to improve the radiation efficiency of on-chip antennas by redirecting the power coupled into the substrate, as in [4,5]. The proposed antenna configuration consists of a parasitic resonator placed on top of the radio chip excited by a shorted patch antenna implemented in the back-end layer stack, a similar approach as in [1].…”

SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers

“…To be able to increase the integration level and also reduce the cost some highly integrated silicon based radio frequency integrated circuit (RFIC) W-band Dicke switched receivers were previously presented [4][5][6]. The overall noise figure (NF) of those radiometer front-ends is, however, around 10 dB or higher.…”

“…13 2 Component requirements for a W-band passive imaging application A W-band passive imager works at stand-off distances (2-20 m) to detect objects hidden under clothing for security screening purposes (concealed weapons and explosives detection). Such a radiometric system is characterised by its thermal resolution or noise equivalent temperature difference (NETD) which is given by [4][5][6] …”

30 GHz RF-MEMS Dicke Switch Network and a Wideband LNA in a 0.25 µm SiGe BiCMOS Technology

“…The sensitivity (or thermal resolution) of such systems is largely influenced by the receiver (LNA) NF, gain and bandwidth and a low-loss Dicke switch network can be used for calibration purposes and compensate for gain variations [10]- [14]. A SiGe LNA and a Dicke switch network with 3 dB/12 dB of losses/isolation at 130 GHz were reported in (Shumakher et al 2013).…”