A bibliography of metal-insulator-semiconductor studies

Schlegel, E. S.

doi:10.1109/t-ed.1967.16101

Cited by 42 publications

(11 citation statements)

References 341 publications

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“…Both logic and memory products used n-channel devices [31] for better performance but they were highly susceptible to field-induced motion of unwanted contaminants. Over the past decade, basic research throughout the industry and at IBM [32] had developed a sound understanding of the causes and cures for various kinds of FET instabilities. Nevertheless, it was an art to implement, control, and maintain these processes.…”

Section: Large-scale Integration-field-effect Transistorsmentioning

confidence: 99%

Semiconductor Manufacturing in IBM, 1957 to the Present: A Perspective

Harding

1981

IBM J. Res. & Dev.

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Semiconductor Manufacturing in \BW\, 1957 to the Present: A PerspectiveOver the past twenty-five years we have witnessed the transition from germanium-based, individual transistors in their hermetically sealed enclosures to VLSI silicon devices interconnected in modular packages containing more than 50 000 logic circuits or as many as 500 000 bits of random-access memory. During this progression, manufacturing facilities producing these modern products have become more complex and technologically more sophisticated than those of any other industry. This review traces these fast-moving changes as they have occurred in IBM, emphasizing the continuous expansion of manufacturing skills and disciplines and how these, in turn, have contributed to the development of today's products and their respective manufacturing systems. 43

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Section: Large-scale Integration-field-effect Transistorsmentioning

confidence: 99%

Semiconductor Manufacturing in IBM, 1957 to the Present: A Perspective

Harding

1981

IBM J. Res. & Dev.

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“…Although individual MOS capacitors [38] and transistors [39] have been made, the key advantages of SOS technology lie in the.area of integrated circuits. Specifically, throughdiffusion to the sapphire surface reduced the drain capacitance of MOS transistors by 2 orders of magnitude [MI, and complete depletion of majority carriers from the film with very small gate voltage resulted in simple structures for complementary MOS transistor circuits [41].…”

Section: Mos Devicesmentioning

confidence: 99%

Thin-film silicon: Preparation, properties, and device applications

et al. 1969

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This paper will review the properties of thin silicon films deposited on sapphire (SOS) and magnesium aluminate spinel by the pyrolysis of silane in the temperature range WO-1200'C.Variations of carrier mobility, free-carrier concentration, minority carrier lifetime, crystalline perfection, and surface quality will be discussed as a function of substrate crystal and growth parameters. M O S transistors exhibiting field-effect mobility close to that obtained with bulk silicon have been fabricated and a complementary M O S transistor memory cell bas been constructed with a WRITE-READ delay of 6 ns. The standby power for the cell is typically 10 p W . Other C M O S circuits display a pair-delay of 1.5-2.0 no. All-epitaxial bipolar transistors with a current gain of 5 and f r of 350 M H z have been made in which all layers are sequentially deposited during one hightemperature operation. Recent improvements in bipolar fabrication techniques have lead t o current gains as high as 25 at 1 0 mA. I. INIXODUCTION E PITAXIAL SILICON layers are routinely deposited [l ] on silicon during the manufacture of monolithic integrated circuits. However, the deposition of highquality single-crystal silicon on an insulator is a much more difficult problem and places rigid demands on the insulator. Very few insulators fulfill all the necessary conditions and allow the growth of high-mobility silicon.The selection of sapphire as a film substrate was a natural one because of its mechanical and chemical properties and because a lattice plane could be selected that was a close match to that of silicon. Single-crystal films grown from SiCl, were first announced in 1963, and later described in a letter published in 1964 [2]. Mueller and Robinson described singlecrystal silicon grown from SiH, and the first MOS transistors made from it in 1964 [3].The orientation relationship of the substrate and the silicon films have been studied extensively [4], [5]. Although the lattice match between the silicon film and the sapphire substrate is not good on any sapphire plane, the long range order in the aluminum-oxygen sites in the substrate appears to allow epitaxy to take place. Two of the more frequently studied orientation relationships have been (1 1 1 ) and (100) silicon grown on (0001) and (1i02) sapphire, respectively.Spinel (various ratios of MgO : A1,0,) is closely related to sapphire but has a cubic structure and consequently provides a simpler crystallographic match to silicon. A con-

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“…where Cv is the specific heat per unit volume, dT/dt is the time derivative of the temperature T, K is the thermal conductivity, F the field strength, and ~ the electrical conductivity. Since a is almost always a strongly varying function of temperature, the solution of [1] is complicated even for the simplest geometry of boundary conditions. The most usual approaches have been to solve [1] for the simple limiting cases: (A) Steady state solution in which the time derivative term is set equal to zero.…”

Section: Introductionmentioning

confidence: 99%

“…The recent advances in the technology of microelectronics have led to extensive research on the physical, chemical, and electrical characteristics of MOS structures (1). Studies (2) on the SiO2-Si system have shown the important role of the insulator-semiconductor interface in determining device behavior.…”

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confidence: 99%

“…Studies (2) on the SiO2-Si system have shown the important role of the insulator-semiconductor interface in determining device behavior. The stringent requirements imposed on thin film dielectrics, including surface passivation, diffusion masking, radiation resistance, and varied applications, have stimulated interest in noncrystalline dielectric materials other than SiO2 (1).…”

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confidence: 99%

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Preparation, Optical and Dielectric Properties of Vapor-Deposited Niobium Oxide Thin Films

Duffy

Wang

Waxman

et al. 1969

J. Electrochem. Soc.

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Thin dielectric films of niobium oxide have been deposited on silicon and quartz substrates by pyrolysis of the niobium alcoholate normalNbfalse(OC2H5)5 normalat 450°C in an oxidizing ambient. Optical measurements have been made on these films in the spectral range 0.2–2.6 µm. Information on dispersion, fundamental absorption edge, and absorption coefficient (as related to photon energy) has been obtained. An electrical evaluation of the films has been made, including dielectric properties and MOS behavior.

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A bibliography of metal-insulator-semiconductor studies

Cited by 42 publications

References 341 publications

Semiconductor Manufacturing in IBM, 1957 to the Present: A Perspective

Semiconductor Manufacturing in IBM, 1957 to the Present: A Perspective

Thin-film silicon: Preparation, properties, and device applications

Preparation, Optical and Dielectric Properties of Vapor-Deposited Niobium Oxide Thin Films

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