A bibliography for high energy spectroscopy studies of high-Tc superconductors (1987–1989)

Shamma, Fawzi Al; Fuggle, J. C.

doi:10.1016/0921-4534(90)90194-j

Cited by 55 publications

(6 citation statements)

References 409 publications

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“…A likely caesium oxide is Cs 2 O since the binding energy of O 1s in this oxide is 527.5 eV [25]. The peak at E b = 531 eV has been shown to arise from the presence of a variety of oxides, hydroxides, carbonates, etc [26]. Note that this structure appears concomitantly with the structure due to extrinsic oxygen species in the valence band regime at 9 eV [1].…”

Section: Resultsmentioning

confidence: 97%

A photoelectron spectroscopy and x-ray absorption study of single crystal with adsorbed Cs: on the origin of the states affected by electron doping and evidence for spatially resolved electron doping

Söderholm

Qvarford

Bernhoff

et al. 1996

J. Phys.: Condens. Matter

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The influence of electron doping, via deposition of small amounts of Cs, on the electronic structure of Bi 2 Sr 2 CaCu 2 O 8 has been studied by high-resolution photoelectron spectroscopy (PES) and x-ray absorption spectroscopy (XAS), utilizing synchrotron radiation. The changes in the electronic structure were monitored by PES of the valence band and of the O 1s, Bi 4f, Bi 5d, Ca 2p and Sr 3d core levels, and by XAS at the O 1s, Cu 2p and Ca 2p edges.The experimental data suggest that the loss of the Fermi edge and the loss of spectral intensity down to about 2 eV below the Fermi level, and the substantial loss of spectral intensity of the pre-edge structure in the O 1s XAS spectrum are mainly due to annihilation of states with O 2p character in the Cu-O layer. It is evident from bulk-and surface-sensitive XAS spectra that the electron doping by Cs affects the electronic structure more strongly close to the surface. This implies that the doping occurs locally and that the charge transfer between the different layers in the unit cell is not uniform. Thus it seems possible to alter the electronic properties of Bi 2 Sr 2 CaCu 2 O 8 locally through spatially resolved electron doping.When larger amounts of Cs are deposited, a chemical reaction occurs which causes a disruption of the Bi-O layer. This deposition regime is characterized by the presence of caesium oxide and reduced (metallic) Bi.

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Section: Resultsmentioning

confidence: 97%

A photoelectron spectroscopy and x-ray absorption study of single crystal with adsorbed Cs: on the origin of the states affected by electron doping and evidence for spatially resolved electron doping

Söderholm

Qvarford

Bernhoff

et al. 1996

J. Phys.: Condens. Matter

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“…Primarily, one has to note that previous XAS results indicate that the general trend for extra holes or electrons in vanadium oxide is to reside in the V 3d band [30,31,35,36] and so to classify vanadium oxides, primarily as Mott Hubbard insulators [37]. Thus, contrary to insulators with strong charge transfer character, if oxygen vacancies in (Hf,V)O 2−y induced change in valency, this may confidently be detected and quantified by probing the TM L 2,3 edges.…”

Section: Stoichiometry Considerations Concerning V-doped Hafniamentioning

confidence: 99%

Vanadium valency and hybridization in V-doped hafnia investigated by electron energy loss spectroscopy

et al. 2001

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“…X-ray absorption spectroscopy and allied high-energy spectroscopy techniques have proved to be of great use in the study of the important question of the symmetry of the itinerant doping holes in various cuprate systems responsible for superconductivity; see, e.g., [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Most reports seem to agree that the O 2p and the Cu 3d holes have a predominantly in-plane symmetry, but with a significant population of out-of-plane O 2p holes.…”

Section: Introductionmentioning

confidence: 99%

A polarized x-ray absorption spectroscopy study of O K and Cu edges in a Tl(2212) thin film

Srivastava

Sekhar

Gasser³

et al. 1998

J. Phys.: Condens. Matter

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A reliable estimate of the density of states having in-plane and out-of-plane symmetry in the O K-edge and the -edge polarized spectra is important for checking the validity of several theoretical models which predict an active role for these states in the mechanism of superconductivity. In the present contribution, we report on our fluorescence-yield O K-edge and -edge polarized spectra obtained for a well characterized and oriented overdoped Tl(2212) thin film as well as our simultaneous fluorescence- and total-yield measurements on an optimally doped Tl(2212) thin film. Our results show that a significant number of out-of-plane and holes also exist in thallium cuprates, more so in the overdoped case, and that use of the bulk-sensitive fluorescence technique is better for obtaining a reliable estimate of the density and symmetry of these holes. The spectra are compared with those reported earlier for other cuprate systems and are interpreted in terms of the available band-structure calculations. No direct correlation between superconductivity and the presence or absence of out-of-plane covalent and doping hole densities appears plausible, so theories based on the existence of a large density of such holes appear to be inconsistent with the experiment.

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A bibliography for high energy spectroscopy studies of high-Tc superconductors (1987–1989)

Cited by 55 publications

References 409 publications

A photoelectron spectroscopy and x-ray absorption study of single crystal with adsorbed Cs: on the origin of the states affected by electron doping and evidence for spatially resolved electron doping

A photoelectron spectroscopy and x-ray absorption study of single crystal with adsorbed Cs: on the origin of the states affected by electron doping and evidence for spatially resolved electron doping

Vanadium valency and hybridization in V-doped hafnia investigated by electron energy loss spectroscopy

A polarized x-ray absorption spectroscopy study of O K and Cu edges in a Tl(2212) thin film

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