A Bi-Directional 300-GHz-Band Phased-Array Transceiver in 65-nm CMOS With Outphasing Transmitting Mode and LO Emission Cancellation

Abstract

This article introduces a four-element 300-GHzband bi-directional phased-array transceiver (TRX). The TRX utilizes the same antenna, signal path, and local oscillator (LO) circuitry to operate either in transmitter (TX) mode or receiver (RX) mode. The TX mode adopts the outphasing technique to increase the average output power for higher order modulation schemes by utilizing the two mixers that are connected directly to the antenna in a mixer-last fashion. The two signal paths also enable the canceling of the LO feed-through (LOFT). The RX mode also benefits from the LOFT cancellation technique to suppress the LO emission, which is a common issue of the mixer-first RXs. The RX has a separate Hartley operation mode to reject the image signal coming from the TX. The TRX chip was implemented using CMOS 65-nm process, and a four-element phased array was implemented by stacking liquid crystal polymer (LCP) flexible printed circuit boards (PCBs). The stacked structure provides the required narrow antenna pitch at the 300-GHz band. The measured beam angle range is from Manuscript

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“…5(c)], and the mismatch between simulation and measurement is likely due to the transistor model inaccuracy over 130 GHz. This is because these two transistors (20 × 1 and 20 × 2 µm) are newly prepared for this design, while the transmission line and capacitors have been used in the W-band and 300-GHz band [65], [69], [70]. Fig.…”

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220-to-320-GHz Fundamental Mixer in 60-nm InP HEMT Technology Achieving 240-Gbps Dual-Band Data Transmission

“…A 300-GHz-band mixers with a wide RF bandwidth and high linearity are essential components for utilizing such a wide band and achieving a high data rate. Mixers with a wide bandwidth fabricated in indium phosphide (InP) high electron mobility transistor (HEMT), InP heterojunction bipolar transistor (HBT), silicon complementary metal-oxide-semiconductor (CMOS), and silicon-germanium (SiGe) bipolar CMOS (BiCMOS) technologies have been reported [2], [3], [4], [5], [6], [7], [8], [9], [10], [11]. Among them, the resistive mixer [2], [3] has the advantages of having a wide band and high linearity with a simple configuration.…”