A background dose proximity effect correction technique for scattering with angular limitation projection electron lithography implemented in hardware

Abstract

Preliminary results from a prototype projection electron-beam stepper-scattering with angular limitation projection electron beam lithography proof-of-concept system

A Review of Proximity Effect Correction in Electron-beam Lithography

“…Since the correction scheme of GHOST is simple and general enough to be implemented on any type of e-beam lithography systems, its application was further extended with various patterns and e-beam parameter settings [37,46,47,50,52,53,54,70]. Watson et al later improved GHOST by applying the pattern exposure and the correction exposure at the same time to eliminate the throughput drawback of the direct-write GHOST [74,87].…”

Mid-infrared photon counting with superconducting nanowires

“…Care must be taken when selecting EBL parameters to take account for the proximity effect -the effect of beam broadening due to unwanted electron scattering resulting in reduced pattern fidelity [155]. There are multiple approaches to proximity effect correction that have been developed [156,157]. Following the EBL exposure, the sample is immersed in a developer solution specific to the resist polymer which will cause un-crosslinked bonds to dissolve, leaving the desired pattern.…”