A 94-GHz 0.35-W power amplifier module

Huang, P.; Huang, Tian-Wei; Wang, Huei; Lin, Eric W.; Shu, Yonghui; Dow, G.S.; Lai, R.; Biedenbender, M.; Elliott, J.

doi:10.1109/22.643854

Cited by 30 publications

(2 citation statements)

References 12 publications

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“…If the loss of the filter can be reduced, the conversion loss of this tripler will be improved at least by 3 dB as shown in our original design. Moreover, if the output is connected to a WR-10 waveguide with a properly designed waveguide transition, such as reported in (15)- (16), the fundamental and second harmonic will be rejected by the waveguide, thus the output filter may not be necessary. Also, since from the measured filter data, the return loss are better than 10 dB from 87-97 GHz, it is very likely the output matching will not affected much by taking out the filter.…”

Section: Circuit Measurementmentioning

confidence: 99%

A W-band GCPW MMIC Diode Tripler

Lin

Wang

Morgan

et al. 2002

32nd European Microwave Conference, 2002

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A W-band GCPW (grounded coplanar waveguide) MMIC diode tripler using GaAs PHEMT process is developed. An anti-parallel diode pair is used to produce third harmonic signal and a GCPW band pass filter is used to reject the spurious signal. The measured conversion loss is 18-20 dB from 87 to 102 GHz at 14-dBm input power. It is observed that if the filter were taken out, this tripler could be improved more than 5-dB in conversion loss without significant affecting in rejection performance. In this case, the chip could be reduced at least by half to a miniature size, that is, from 1.5 x 1 mm 2 to about 0.8 x 0.8 mm 2 .

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Section: Circuit Measurementmentioning

confidence: 99%

A W-band GCPW MMIC Diode Tripler

Lin

Wang

Morgan

et al. 2002

32nd European Microwave Conference, 2002

Self Cite

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“…This need has led to interest in the development of W-band high power, high efficiency amplifiers, which are currently realized almost exclusively in gallium arsenide (GaAs) and indium phosphide (InP) material systems due to their high transition frequency (Ft) performance [32], [33]. However, use of these devices has resulted in larger device peripheries for a given specified output power, more combining structures, higher combining losses, and lower power densities.…”

Section: Wwwintechopencommentioning

confidence: 99%

The Present and Future Trends in High Power Microwave and Millimeter Wave Technologies

Azam¹,

Wahab²

2010

Advanced Microwave and Millimeter Wave Technologies Semiconductor Devices Circuits and Systems

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Millimeter‐Wave Integrated Circuits

Wang

Lin

Liu

et al. 2005

Encyclopedia of RF and Microwave Engineering

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Millimeter‐wave (MMW) components are becoming more available and affordable because of advances in design, processing, testing, and packaging technology. MMW circuits have become smaller, highly integrated, and low‐cost, and are being applied in instrumentation, electronic warfare, satellite communications and other applications. As a result, many MMW systems are being developed and deployed that provide new and unique capabilities such as more information transfer (wider bandwidth), enhanced precision (higher resolution), and all‐weather operation (through fog, dust, and smoke), for both military and commercial applications. Monolithic MMW integrated circuits (MMICs) are crucial to meet the requirements for the MMW systems and play an important role in the MMW components. This article describes the current status of MMW monolithic integrated circuits, including the MMIC technologies, representative designs, and performance for various integrated circuits.

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A 94-GHz 0.35-W power amplifier module

Cited by 30 publications

References 12 publications

A W-band GCPW MMIC Diode Tripler

A W-band GCPW MMIC Diode Tripler

The Present and Future Trends in High Power Microwave and Millimeter Wave Technologies

Millimeter‐Wave Integrated Circuits

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