A 90 nm CMOS V-Band Low-Noise Active Balun With Broadband Phase-Correction Technique

Chiang, Hsi-Han; Huang, Fu-Chien; Wang, Chao-Shiun; Wang, Chorng-Kuang

doi:10.1109/jssc.2011.2164135

Cited by 29 publications

(16 citation statements)

References 11 publications

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“…2 which is constituted with two unit circuits [5]. Two unit circuits provide unequal phase-vs-frequency response.…”

Section: The Proposed Active Balunmentioning

confidence: 99%

“…Consequently the total phase error (PE) manifests itself in difference between phases of V out + and V outwhich is calculated as vector summation of I 1 , I 2 and I 3 , I 4 , respectively, leading to (3) [5]:…”

Section: The Proposed Active Balunmentioning

confidence: 99%

“…To correct phase imbalance in [5], FETs in balun 1 (M5 and M6 in [5]) must be designed in the same DC conditions and the voltage gains of M5 and M6 in [5] should be maintained to be exactly 0 dB, which is not easy. In order to overcome this limit, we propose the current-steering architecture for balun 1 which can be easily designed and provides the optimum point for gain and phase errors as shown in Fig.…”

Section: The Proposed Active Balunmentioning

confidence: 99%

“…Phase correction technique has been sometimes used for active baluns, where inevitable phase imbalance can be alleviated by adjusting the phase of balanced output signals adequately [5]. The conventional active baluns capitalize opposite frequency-vs-phase responses of two different amplifiers which can be mainly made up of common source and common gate configurations.…”

Section: Introductionmentioning

confidence: 99%

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Current-Steered Active Balun with Phase Correction

Park¹,

Jin²,

Cho³

2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-An active balun using current steering for phase correction is presented. The proposed active balun is constructed with two different unit balun structures based on current steering to reduce phase and amplitude errors. This type of topology can be compared with the conventional phase and amplitude correction techniques which do not incorporate the current steering. Designed and fabricated active balun in 0.18 μm CMOS process operates over 0.95 -1.45 GHz band, showing input reflection coefficient under -15 dB, phase error of 11˚ and gain error of 0.5 dB. Gain is measured to be 0.3 dB maximum and power consumption of 7.2 mW is measured.

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“…2 which is constituted with two unit circuits [5]. Two unit circuits provide unequal phase-vs-frequency response.…”

Section: The Proposed Active Balunmentioning

confidence: 99%

Section: The Proposed Active Balunmentioning

confidence: 99%

Section: The Proposed Active Balunmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Current-Steered Active Balun with Phase Correction

Park¹,

Jin²,

Cho³

2015

JSTS:Journal of Semiconductor Technology and Science

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“…To support single-ended input, an active balun with a phase-error correction technique [4] is used as a driver stage to perform single-to-differential conversion at the PA input. All transistors in the balun are designed with the same size and same bias current.…”

mentioning

confidence: 99%

2.5 A 2-to-6GHz Class-AB power amplifier with 28.4% PAE in 65nm CMOS supporting 256QAM

Yeo

2015

2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers

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Wideband power amplifiers (PAs) with high power-added efficiency (PAE) are required by software-defined radio and high-data-rate communications. A PA in Class-AB, which can provide linear amplification with PAE better than Class-A, has been reported in [1] to achieve bandwidth larger than one octave. However, Class-AB operation generates a large amount of 2 nd -harmonic current at the transistor output, which has amplitude as high as up to 42% of the fundamental current in theory [2]. An output matching network, providing optimum load impedance only at the fundamental frequency, is insufficient to achieve good power performance, bringing big challenges to integrated Class-AB PA design with octave bandwidth. In this work, we demonstrate a 2-to-6GHz (fractional bandwidth of 115.5%) Class-AB PA designed in 65nm CMOS. An output matching technique based on differential architecture, which enables the PA to achieve a maximum PAE of 28.4% and an overall PAE above 19%, is proposed to provide transistor output with optimum load impedance for both fundamental and 2 nd harmonic over an octave bandwidth. Without using any pre-distortion, the PA can deliver output power of 9.31 to 11.31dBm with EVM<-32dB for 256QAM signal (802.11ac format, 20MHz bandwidth) from 2 to 6GHz. Figure 2.5.1 shows the schematic of the proposed PA.To design the output matching network, optimum load impedances for fundamental (Z opt_1st ) and 2 nd -harmonic (Z opt_2nd ) frequencies of the output stage are simulated from 2 to 6GHz. A model composed of parallel R out and C out (27Ω and 0.94pF for the given device) showing good agreement with Z opt_1st over the bandwidth is built for synthesizing the matching network for the fundamental frequency. With Z opt_1st set at the fundamental frequency, simulated contours of P SAT and PAE at representative frequencies of 2.4, 3.7 and 5.8GHz for load impedance at the 2 nd harmonic are shown in Fig. 2.5.2, where impedances on the Smith chart are normalized to R out . It shows that even with the fundamental frequency optimally matched, load impedance at the 2 nd harmonic may vary P SAT and PAE by 4.56/4.07/3.58dB and 29.6%/26.1%/21.1% respectively. Considering the susceptance of C out , target areas of 2 nd -harmonic impedance on the Smith chart indicate that impedance close to a short circuit, or capacitive impedance with normalized amplitude smaller than 1, is required at the current source reference plane of the transistor output to achieve good P SAT and PAE.To make the matching of the fundamental and 2 nd harmonic over an octave possible, differential architecture is adopted such that fundamental currents at the transistor output are in differential mode but 2 nd -harmonic currents are in common mode. By utilizing the coupling inside the transformer primary winding and the different behaviours of the transformer center-tap under the two modes, the output matching network providing Z opt_1st and Z opt_2nd with bandwidth larger than one octave can be designed. As shown in Fig. 2.5.1, the two halves of the transf...

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Active balun using resistive feedback for low gain imbalance

Choi

Jin

Cho

et al. 2018

Micro & Optical Tech Letters

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An active balun using current steering topology is presented for phase and amplitude corrections. The proposed active balun is constructed with two different unit balun structures based on resistive feedback to reduce phase and amplitude errors. The first unit balun composed of the common source configuration provides a main transconductance stage for the proposed active balun. The second unit balun using common source and common gate configurations works for phase and gain error reduction. The resistive feedback proposed here leads to mitigation of phase error and then amplitude error, and an equation for deciding the feedback resistance is successfully deduced. The value of a feedback resistor is determined to provide the least phase and amplitude errors by optimizing the derived design equation. Designed and fabricated active balun in 65 nm CMOS process operates over 1.0–1.2 GHz band, showing input and output reflection coefficients under –10 dB, phase error under 3.5° and gain error under 1.4 dB over the frequency of interest. Moreover, the gain is measured to be 4 dB maximum and power consumption of 2.6 mW is measured.

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A 90 nm CMOS V-Band Low-Noise Active Balun With Broadband Phase-Correction Technique

Cited by 29 publications

References 11 publications

Current-Steered Active Balun with Phase Correction

Current-Steered Active Balun with Phase Correction

2.5 A 2-to-6GHz Class-AB power amplifier with 28.4% PAE in 65nm CMOS supporting 256QAM

Active balun using resistive feedback for low gain imbalance

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