A 90-GHz double-drift IMPATT diode made with Si MBE

Luy, J.-F.; Casel, A.; Behr, W.; Kasper, E.

doi:10.1109/t-ed.1987.23049

Cited by 82 publications

(36 citation statements)

References 15 publications

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“…Experimentally obtained RF power output from Si DDR IMPATT sources are 600 mW at 94 GHz (Luy et al 1987) and 300 mW at 140 GHz (Wollitzer et al 1996) which are shown in Fig. 12.…”

Section: High-frequency Propertiesmentioning

confidence: 98%

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Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Acharyya

Banerjee

2012

Appl Nanosci

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In this paper the potentiality of impact avalanche transit time (IMPATT) devices based on different semiconductor materials such as GaAs, Si, InP, 4H-SiC and Wurtzite-GaN (Wz-GaN) has been explored for operation at terahertz frequencies. Drift-diffusion model is used to design double-drift region (DDR) IMPATTs based on different materials at millimeter-wave (mm-wave) and terahertz (THz) frequencies. The performance limitations of these devices are studied from the avalanche response times at different mm-wave and THz frequencies. Results show that the upper cut-off frequency limits of GaAs and Si DDR IMPATTs are 220 GHz and 0.5 THz, respectively, whereas the same for InP and 4H-SiC DDR IMPATTs is 1.0 THz. Wz-GaN DDR IMPATTs are found to be excellent candidate for generation of RF power at THz frequencies of the order of 5.0 THz with appreciable DC to RF conversion efficiency. Further, it is observed that up to 1.0 THz, 4H-SiC DDR IMPATTs excel Wz-GaN DDR IMPATTs as regards their RF power outputs. Thus, the wide bandgap semiconductors such as Wz-GaN and 4H-SiC are highly suitable materials for DDR IMPATTs at both mm-wave and THz frequency ranges.

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“…Experimentally obtained RF power output from Si DDR IMPATT sources are 600 mW at 94 GHz (Luy et al 1987) and 300 mW at 140 GHz (Wollitzer et al 1996) which are shown in Fig. 12.…”

Section: High-frequency Propertiesmentioning

confidence: 98%

“…Si and GaAs IMPATTs are already established as powerful and efficient sources at different millimeter-wave window frequencies (Luy et al 1987;Dalle et al 1990;Luschas et al 2002a, b;Shih et al 1983;Eisele and Haddad 1995). Eisele et al (1996) first experimentally demonstrated the InP-based IMPATT operation at W-band.…”

Section: Introductionmentioning

confidence: 99%

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Acharyya

Banerjee

2012

Appl Nanosci

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“…7 at three bias current densities for a fixed voltage modulation (50 %). The reported large-signal results of DDR Si transit time devices at 94, 140 and 220 GHz window frequencies [12] and the corresponding experimental results [17][18][19] are shown in Fig. 7 for the sake of comparison of RF performance of DAR and DDR Si IMPATTs at those frequencies.…”

Section: Comparison Between Simulation and Experimental Results Of Ddmentioning

confidence: 99%

Multiple-band large-signal characterization of millimeter-wave double avalanche region transit time diode

2014

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A large-signal method based on non-sinusoidal voltage excitation model is used to study the DC and RF characteristics of Double Avalanche Region (DAR) Silicon Transit Time diode. A large-signal simulation program based on drift-diffusion model is developed for this study. The simulation results show the existence of several distinct negative conductance bands in the admittance characteristics separated by positive conductance. Thus the DAR device is capable of delivering RF power not only at the design frequency but also at several frequency bands higher than the design frequency band in the mm-wave regime. A comparative study with DDR Si device designed to deliver RF power at a particular mm-wave frequency band shows that DAR Si device is capable of delivering significantly higher RF power not only at the designed mm-wave frequency band, but also at higher frequency bands.

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“…At different millimeter-wave window frequencies, Si and GaAs IMPATTs are already established as efficient and powerful sources [12][13][14]. For generation of RF power at THz frequencies, the potentiality of wide band-gap materials (GaN,SiC) has been reported in the recent years.…”

Section: Introductionmentioning

confidence: 99%